Ontology type: schema:ScholarlyArticle
2004-04
AUTHORSP. N. Brunkov, A. A. Gutkin, A. K. Moiseenko, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Cherkashin, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin
ABSTRACTElectron traps in GaAs grown by MBE at temperatures of 200–300°C (LT-GaAs) were studied. Capacitance deep level transient spectroscopy (DLTS) was used to study the Schottky barrier on n-GaAs, whose space-charge region contained a built-in LT-GaAs layer ∼0.1 µm thick. The size of arsenic clusters formed in LT-GaAs on annealing at 580°C depended on the growth temperature. Two new types of electron traps were found in LT-GaAs layers grown at 200°C and containing As clusters 6–8 nm in diameter. The activation energy of thermal electron emission from these traps was 0.47 and 0.59 eV, and their concentration was ∼1017 cm−3, which is comparable with the concentration of As clusters determined by transmission electron microscopy. In LT-GaAs samples that were grown at 300°C and contained no arsenic clusters, the activation energy of traps was 0.61 eV. The interrelation between these electron levels and the system of As clusters and point defects in LT-GaAs is discussed. More... »
PAGES387-392
http://scigraph.springernature.com/pub.10.1134/1.1734663
DOIhttp://dx.doi.org/10.1134/1.1734663
DIMENSIONShttps://app.dimensions.ai/details/publication/pub.1004988598
JSON-LD is the canonical representation for SciGraph data.
TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT
[
{
"@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json",
"about": [
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Materials Engineering",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Engineering",
"type": "DefinedTerm"
}
],
"author": [
{
"affiliation": {
"alternateName": "Ioffe Institute",
"id": "https://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Brunkov",
"givenName": "P. N.",
"id": "sg:person.011771360023.05",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011771360023.05"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Institute",
"id": "https://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Gutkin",
"givenName": "A. A.",
"id": "sg:person.016423303441.91",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016423303441.91"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Institute",
"id": "https://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Moiseenko",
"givenName": "A. K.",
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Institute",
"id": "https://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Musikhin",
"givenName": "Yu. G.",
"id": "sg:person.014603755431.88",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014603755431.88"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Institute",
"id": "https://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Chaldyshev",
"givenName": "V. V.",
"id": "sg:person.010716755351.29",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010716755351.29"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Institute",
"id": "https://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Cherkashin",
"givenName": "N. N.",
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Institute",
"id": "https://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Konnikov",
"givenName": "S. G.",
"id": "sg:person.016341426205.71",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016341426205.71"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Institute of Semiconductor Physics",
"id": "https://www.grid.ac/institutes/grid.450314.7",
"name": [
"Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, 630090, Novosibirsk, Russia"
],
"type": "Organization"
},
"familyName": "Preobrazhenskii",
"givenName": "V. V.",
"id": "sg:person.010664106542.73",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010664106542.73"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Institute of Semiconductor Physics",
"id": "https://www.grid.ac/institutes/grid.450314.7",
"name": [
"Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, 630090, Novosibirsk, Russia"
],
"type": "Organization"
},
"familyName": "Putyato",
"givenName": "M. A.",
"id": "sg:person.014730523656.90",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014730523656.90"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Institute of Semiconductor Physics",
"id": "https://www.grid.ac/institutes/grid.450314.7",
"name": [
"Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, 630090, Novosibirsk, Russia"
],
"type": "Organization"
},
"familyName": "Semyagin",
"givenName": "B. R.",
"id": "sg:person.011644303155.87",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011644303155.87"
],
"type": "Person"
}
],
"citation": [
{
"id": "https://doi.org/10.1016/0022-0248(91)90943-y",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1016682839"
],
"type": "CreativeWork"
},
{
"id": "https://doi.org/10.1016/0022-0248(91)90943-y",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1016682839"
],
"type": "CreativeWork"
},
{
"id": "https://doi.org/10.1049/el:19770140",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1056764027"
],
"type": "CreativeWork"
},
{
"id": "https://doi.org/10.1063/1.101229",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1057648813"
],
"type": "CreativeWork"
},
{
"id": "https://doi.org/10.1063/1.105162",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1057652731"
],
"type": "CreativeWork"
},
{
"id": "https://doi.org/10.1063/1.117733",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1057681939"
],
"type": "CreativeWork"
},
{
"id": "https://doi.org/10.1063/1.1413219",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1057704106"
],
"type": "CreativeWork"
},
{
"id": "https://doi.org/10.1063/1.1477614",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1057710565"
],
"type": "CreativeWork"
},
{
"id": "https://doi.org/10.1063/1.1663719",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1057742162"
],
"type": "CreativeWork"
},
{
"id": "https://doi.org/10.1063/1.338265",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1057944635"
],
"type": "CreativeWork"
},
{
"id": "https://doi.org/10.1143/jjap.33.l1651",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1063053087"
],
"type": "CreativeWork"
},
{
"id": "https://doi.org/10.1143/jjap.35.1630",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1063055419"
],
"type": "CreativeWork"
}
],
"datePublished": "2004-04",
"datePublishedReg": "2004-04-01",
"description": "Electron traps in GaAs grown by MBE at temperatures of 200\u2013300\u00b0C (LT-GaAs) were studied. Capacitance deep level transient spectroscopy (DLTS) was used to study the Schottky barrier on n-GaAs, whose space-charge region contained a built-in LT-GaAs layer \u223c0.1 \u00b5m thick. The size of arsenic clusters formed in LT-GaAs on annealing at 580\u00b0C depended on the growth temperature. Two new types of electron traps were found in LT-GaAs layers grown at 200\u00b0C and containing As clusters 6\u20138 nm in diameter. The activation energy of thermal electron emission from these traps was 0.47 and 0.59 eV, and their concentration was \u223c1017 cm\u22123, which is comparable with the concentration of As clusters determined by transmission electron microscopy. In LT-GaAs samples that were grown at 300\u00b0C and contained no arsenic clusters, the activation energy of traps was 0.61 eV. The interrelation between these electron levels and the system of As clusters and point defects in LT-GaAs is discussed.",
"genre": "research_article",
"id": "sg:pub.10.1134/1.1734663",
"inLanguage": [
"en"
],
"isAccessibleForFree": false,
"isPartOf": [
{
"id": "sg:journal.1136692",
"issn": [
"1063-7826",
"1090-6479"
],
"name": "Semiconductors",
"type": "Periodical"
},
{
"issueNumber": "4",
"type": "PublicationIssue"
},
{
"type": "PublicationVolume",
"volumeNumber": "38"
}
],
"name": "Capacitance study of electron traps in low-temperature-grown GaAs",
"pagination": "387-392",
"productId": [
{
"name": "readcube_id",
"type": "PropertyValue",
"value": [
"17c57df68ef34650556e2196a326fd90a5ec212c62b646396577de42be4f5a3b"
]
},
{
"name": "doi",
"type": "PropertyValue",
"value": [
"10.1134/1.1734663"
]
},
{
"name": "dimensions_id",
"type": "PropertyValue",
"value": [
"pub.1004988598"
]
}
],
"sameAs": [
"https://doi.org/10.1134/1.1734663",
"https://app.dimensions.ai/details/publication/pub.1004988598"
],
"sdDataset": "articles",
"sdDatePublished": "2019-04-11T00:13",
"sdLicense": "https://scigraph.springernature.com/explorer/license/",
"sdPublisher": {
"name": "Springer Nature - SN SciGraph project",
"type": "Organization"
},
"sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8695_00000498.jsonl",
"type": "ScholarlyArticle",
"url": "http://link.springer.com/10.1134/1.1734663"
}
]Download the RDF metadata as: json-ld nt turtle xml License info
JSON-LD is a popular format for linked data which is fully compatible with JSON.
curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/1.1734663'
N-Triples is a line-based linked data format ideal for batch operations.
curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/1.1734663'
Turtle is a human-readable linked data format.
curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/1.1734663'
RDF/XML is a standard XML format for linked data.
curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/1.1734663'
This table displays all metadata directly associated to this object as RDF triples.
158 TRIPLES
21 PREDICATES
38 URIs
19 LITERALS
7 BLANK NODES