Capacitance study of electron traps in low-temperature-grown GaAs View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2004-04

AUTHORS

P. N. Brunkov, A. A. Gutkin, A. K. Moiseenko, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Cherkashin, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

ABSTRACT

Electron traps in GaAs grown by MBE at temperatures of 200–300°C (LT-GaAs) were studied. Capacitance deep level transient spectroscopy (DLTS) was used to study the Schottky barrier on n-GaAs, whose space-charge region contained a built-in LT-GaAs layer ∼0.1 µm thick. The size of arsenic clusters formed in LT-GaAs on annealing at 580°C depended on the growth temperature. Two new types of electron traps were found in LT-GaAs layers grown at 200°C and containing As clusters 6–8 nm in diameter. The activation energy of thermal electron emission from these traps was 0.47 and 0.59 eV, and their concentration was ∼1017 cm−3, which is comparable with the concentration of As clusters determined by transmission electron microscopy. In LT-GaAs samples that were grown at 300°C and contained no arsenic clusters, the activation energy of traps was 0.61 eV. The interrelation between these electron levels and the system of As clusters and point defects in LT-GaAs is discussed. More... »

PAGES

387-392

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1734663

DOI

http://dx.doi.org/10.1134/1.1734663

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1004988598


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Brunkov", 
        "givenName": "P. N.", 
        "id": "sg:person.011771360023.05", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011771360023.05"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gutkin", 
        "givenName": "A. A.", 
        "id": "sg:person.016423303441.91", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016423303441.91"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Moiseenko", 
        "givenName": "A. K.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Musikhin", 
        "givenName": "Yu. G.", 
        "id": "sg:person.014603755431.88", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014603755431.88"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Chaldyshev", 
        "givenName": "V. V.", 
        "id": "sg:person.010716755351.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010716755351.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Cherkashin", 
        "givenName": "N. N.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Konnikov", 
        "givenName": "S. G.", 
        "id": "sg:person.016341426205.71", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016341426205.71"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Preobrazhenskii", 
        "givenName": "V. V.", 
        "id": "sg:person.010664106542.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010664106542.73"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Putyato", 
        "givenName": "M. A.", 
        "id": "sg:person.014730523656.90", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014730523656.90"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Semyagin", 
        "givenName": "B. R.", 
        "id": "sg:person.011644303155.87", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011644303155.87"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/0022-0248(91)90943-y", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016682839"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-0248(91)90943-y", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016682839"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1049/el:19770140", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056764027"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.101229", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057648813"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.105162", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057652731"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.117733", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057681939"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1413219", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057704106"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1477614", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057710565"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1663719", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057742162"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.338265", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057944635"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1143/jjap.33.l1651", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1063053087"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1143/jjap.35.1630", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1063055419"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2004-04", 
    "datePublishedReg": "2004-04-01", 
    "description": "Electron traps in GaAs grown by MBE at temperatures of 200\u2013300\u00b0C (LT-GaAs) were studied. Capacitance deep level transient spectroscopy (DLTS) was used to study the Schottky barrier on n-GaAs, whose space-charge region contained a built-in LT-GaAs layer \u223c0.1 \u00b5m thick. The size of arsenic clusters formed in LT-GaAs on annealing at 580\u00b0C depended on the growth temperature. Two new types of electron traps were found in LT-GaAs layers grown at 200\u00b0C and containing As clusters 6\u20138 nm in diameter. The activation energy of thermal electron emission from these traps was 0.47 and 0.59 eV, and their concentration was \u223c1017 cm\u22123, which is comparable with the concentration of As clusters determined by transmission electron microscopy. In LT-GaAs samples that were grown at 300\u00b0C and contained no arsenic clusters, the activation energy of traps was 0.61 eV. The interrelation between these electron levels and the system of As clusters and point defects in LT-GaAs is discussed.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/1.1734663", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "4", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "38"
      }
    ], 
    "name": "Capacitance study of electron traps in low-temperature-grown GaAs", 
    "pagination": "387-392", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "17c57df68ef34650556e2196a326fd90a5ec212c62b646396577de42be4f5a3b"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1734663"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1004988598"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1734663", 
      "https://app.dimensions.ai/details/publication/pub.1004988598"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T00:13", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8695_00000498.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134/1.1734663"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/1.1734663'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/1.1734663'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/1.1734663'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/1.1734663'


 

This table displays all metadata directly associated to this object as RDF triples.

158 TRIPLES      21 PREDICATES      38 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1734663 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N3a8c782e79ac4c999d5a902cbb2e96fb
4 schema:citation https://doi.org/10.1016/0022-0248(91)90943-y
5 https://doi.org/10.1049/el:19770140
6 https://doi.org/10.1063/1.101229
7 https://doi.org/10.1063/1.105162
8 https://doi.org/10.1063/1.117733
9 https://doi.org/10.1063/1.1413219
10 https://doi.org/10.1063/1.1477614
11 https://doi.org/10.1063/1.1663719
12 https://doi.org/10.1063/1.338265
13 https://doi.org/10.1143/jjap.33.l1651
14 https://doi.org/10.1143/jjap.35.1630
15 schema:datePublished 2004-04
16 schema:datePublishedReg 2004-04-01
17 schema:description Electron traps in GaAs grown by MBE at temperatures of 200–300°C (LT-GaAs) were studied. Capacitance deep level transient spectroscopy (DLTS) was used to study the Schottky barrier on n-GaAs, whose space-charge region contained a built-in LT-GaAs layer ∼0.1 µm thick. The size of arsenic clusters formed in LT-GaAs on annealing at 580°C depended on the growth temperature. Two new types of electron traps were found in LT-GaAs layers grown at 200°C and containing As clusters 6–8 nm in diameter. The activation energy of thermal electron emission from these traps was 0.47 and 0.59 eV, and their concentration was ∼1017 cm−3, which is comparable with the concentration of As clusters determined by transmission electron microscopy. In LT-GaAs samples that were grown at 300°C and contained no arsenic clusters, the activation energy of traps was 0.61 eV. The interrelation between these electron levels and the system of As clusters and point defects in LT-GaAs is discussed.
18 schema:genre research_article
19 schema:inLanguage en
20 schema:isAccessibleForFree false
21 schema:isPartOf N40323aa0b8da4ca2a58ebe6529b894c0
22 N996f68451afe49e3b3e3df2399c5256d
23 sg:journal.1136692
24 schema:name Capacitance study of electron traps in low-temperature-grown GaAs
25 schema:pagination 387-392
26 schema:productId N0334ba267e074c72b369e967b5a2aed7
27 N56613b8b945648a3ac70247493e0e11b
28 N64846d7c0b3644ec832090626af79f8d
29 schema:sameAs https://app.dimensions.ai/details/publication/pub.1004988598
30 https://doi.org/10.1134/1.1734663
31 schema:sdDatePublished 2019-04-11T00:13
32 schema:sdLicense https://scigraph.springernature.com/explorer/license/
33 schema:sdPublisher N14ee5801170c4400bf1cce49023f2c1a
34 schema:url http://link.springer.com/10.1134/1.1734663
35 sgo:license sg:explorer/license/
36 sgo:sdDataset articles
37 rdf:type schema:ScholarlyArticle
38 N0334ba267e074c72b369e967b5a2aed7 schema:name dimensions_id
39 schema:value pub.1004988598
40 rdf:type schema:PropertyValue
41 N04c954c745b7426bb1018995f65eb6ea rdf:first sg:person.014603755431.88
42 rdf:rest N757ffced82c64b95bf67abaae6f954d7
43 N14ee5801170c4400bf1cce49023f2c1a schema:name Springer Nature - SN SciGraph project
44 rdf:type schema:Organization
45 N3a8c782e79ac4c999d5a902cbb2e96fb rdf:first sg:person.011771360023.05
46 rdf:rest Nc70b1537dc8d42da9b6634869b14725f
47 N40323aa0b8da4ca2a58ebe6529b894c0 schema:issueNumber 4
48 rdf:type schema:PublicationIssue
49 N56613b8b945648a3ac70247493e0e11b schema:name doi
50 schema:value 10.1134/1.1734663
51 rdf:type schema:PropertyValue
52 N6161125acfb7426780356e19e08062ae rdf:first N636c5db765a9400198d14fd1309f30b5
53 rdf:rest N9837412ed18e437ca97927d38e2026ca
54 N636c5db765a9400198d14fd1309f30b5 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
55 schema:familyName Cherkashin
56 schema:givenName N. N.
57 rdf:type schema:Person
58 N64846d7c0b3644ec832090626af79f8d schema:name readcube_id
59 schema:value 17c57df68ef34650556e2196a326fd90a5ec212c62b646396577de42be4f5a3b
60 rdf:type schema:PropertyValue
61 N757ffced82c64b95bf67abaae6f954d7 rdf:first sg:person.010716755351.29
62 rdf:rest N6161125acfb7426780356e19e08062ae
63 N9837412ed18e437ca97927d38e2026ca rdf:first sg:person.016341426205.71
64 rdf:rest Ne37b2b63534a429cb0bd3c930997131e
65 N996f68451afe49e3b3e3df2399c5256d schema:volumeNumber 38
66 rdf:type schema:PublicationVolume
67 Nc70b1537dc8d42da9b6634869b14725f rdf:first sg:person.016423303441.91
68 rdf:rest Ne879a4c89bd447c3ad128d539b04202a
69 Ncfc56985e7794335b508d15aab0a4b21 rdf:first sg:person.014730523656.90
70 rdf:rest Ne288fa1cb9964315960fca5ae7163932
71 Ne288fa1cb9964315960fca5ae7163932 rdf:first sg:person.011644303155.87
72 rdf:rest rdf:nil
73 Ne37b2b63534a429cb0bd3c930997131e rdf:first sg:person.010664106542.73
74 rdf:rest Ncfc56985e7794335b508d15aab0a4b21
75 Ne879a4c89bd447c3ad128d539b04202a rdf:first Nfcb14766b19a48debf0b84a2018ba5c9
76 rdf:rest N04c954c745b7426bb1018995f65eb6ea
77 Nfcb14766b19a48debf0b84a2018ba5c9 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
78 schema:familyName Moiseenko
79 schema:givenName A. K.
80 rdf:type schema:Person
81 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
82 schema:name Engineering
83 rdf:type schema:DefinedTerm
84 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
85 schema:name Materials Engineering
86 rdf:type schema:DefinedTerm
87 sg:journal.1136692 schema:issn 1063-7826
88 1090-6479
89 schema:name Semiconductors
90 rdf:type schema:Periodical
91 sg:person.010664106542.73 schema:affiliation https://www.grid.ac/institutes/grid.450314.7
92 schema:familyName Preobrazhenskii
93 schema:givenName V. V.
94 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010664106542.73
95 rdf:type schema:Person
96 sg:person.010716755351.29 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
97 schema:familyName Chaldyshev
98 schema:givenName V. V.
99 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010716755351.29
100 rdf:type schema:Person
101 sg:person.011644303155.87 schema:affiliation https://www.grid.ac/institutes/grid.450314.7
102 schema:familyName Semyagin
103 schema:givenName B. R.
104 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011644303155.87
105 rdf:type schema:Person
106 sg:person.011771360023.05 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
107 schema:familyName Brunkov
108 schema:givenName P. N.
109 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011771360023.05
110 rdf:type schema:Person
111 sg:person.014603755431.88 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
112 schema:familyName Musikhin
113 schema:givenName Yu. G.
114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014603755431.88
115 rdf:type schema:Person
116 sg:person.014730523656.90 schema:affiliation https://www.grid.ac/institutes/grid.450314.7
117 schema:familyName Putyato
118 schema:givenName M. A.
119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014730523656.90
120 rdf:type schema:Person
121 sg:person.016341426205.71 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
122 schema:familyName Konnikov
123 schema:givenName S. G.
124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016341426205.71
125 rdf:type schema:Person
126 sg:person.016423303441.91 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
127 schema:familyName Gutkin
128 schema:givenName A. A.
129 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016423303441.91
130 rdf:type schema:Person
131 https://doi.org/10.1016/0022-0248(91)90943-y schema:sameAs https://app.dimensions.ai/details/publication/pub.1016682839
132 rdf:type schema:CreativeWork
133 https://doi.org/10.1049/el:19770140 schema:sameAs https://app.dimensions.ai/details/publication/pub.1056764027
134 rdf:type schema:CreativeWork
135 https://doi.org/10.1063/1.101229 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057648813
136 rdf:type schema:CreativeWork
137 https://doi.org/10.1063/1.105162 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057652731
138 rdf:type schema:CreativeWork
139 https://doi.org/10.1063/1.117733 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057681939
140 rdf:type schema:CreativeWork
141 https://doi.org/10.1063/1.1413219 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057704106
142 rdf:type schema:CreativeWork
143 https://doi.org/10.1063/1.1477614 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057710565
144 rdf:type schema:CreativeWork
145 https://doi.org/10.1063/1.1663719 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057742162
146 rdf:type schema:CreativeWork
147 https://doi.org/10.1063/1.338265 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057944635
148 rdf:type schema:CreativeWork
149 https://doi.org/10.1143/jjap.33.l1651 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063053087
150 rdf:type schema:CreativeWork
151 https://doi.org/10.1143/jjap.35.1630 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063055419
152 rdf:type schema:CreativeWork
153 https://www.grid.ac/institutes/grid.423485.c schema:alternateName Ioffe Institute
154 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
155 rdf:type schema:Organization
156 https://www.grid.ac/institutes/grid.450314.7 schema:alternateName Institute of Semiconductor Physics
157 schema:name Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, 630090, Novosibirsk, Russia
158 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...