The structure of thermomigration channels in silicon View Full Text


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Article Info

DATE

2004-03

AUTHORS

É. Yu. Buchin, Yu. I. Denisenko, S. G. Simakin

ABSTRACT

We have studied deep and through channels formed in n-Si wafers by means of thermal migration of thin discrete aluminum zones. The region of thermal migration channels was investigated using selective chemical etching of silicon in combination with secondary ion mass spectrometry for the analysis of impurity distributions. It is established that the channels are surrounded by two distinct peripheral shells. More... »

PAGES

205-207

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1707168

DOI

http://dx.doi.org/10.1134/1.1707168

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1008136419


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