Dependence of structural and optical properties of QD arrays in an InAs/GaAs system on surface temperature and growth rate View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2004-03

AUTHORS

V. G. Dubrovskii, Yu. G. Musikhin, G. É. Cirlin, V. A. Egorov, N. K. Polyakov, Yu. B. Samsonenko, A. A. Tonkikh, N. V. Kryzhanovskaya, N. A. Bert, V. M. Ustinov

ABSTRACT

Properties of InAs QD arrays on a <100> GaAs surface in relation to the surface temperature and InAs growth rate are studied experimentally and theoretically. A kinetic model of QD formation in heteroepitaxial growth is developed, which allows the calculation of the mean lateral size and surface density of islands as functions of the growth conditions and duration. Experimental study of optical and structural properties is performed for QDs with an effective thickness of 2 ML, grown at different substrate temperatures and growth rates. The calculated results correlate well with the experimental data. The raising of the surface temperature and slowing of the growth rate result in a considerable increase in the QD mean lateral size and a decrease in their surface density. More... »

PAGES

329-334

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1682338

DOI

http://dx.doi.org/10.1134/1.1682338

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1042525819


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