Chromium diffusion in gallium arsenide View Full Text


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Article Info

DATE

2004-03

AUTHORS

S. S. Khludkov, O. B. Koretskaya, A. V. Tyazhev

ABSTRACT

Chromium diffusion in GaAs was studied by measuring the thickness of high-resistivity layers formed during diffusion of chromium (a deep acceptor) in n-GaAs. The dependence of the chromium diffusivity in GaAs on the temperature, arsenic-vapor pressure, conductivity type, and carrier density was determined. The temperature dependence of the diffusivity is described by the Arrhenius equation with the parameters D0=8×109 cm2/s and E=4.9 eV. The dependence of the diffusivity on the arsenic-vapor pressure is described by the expression \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document} $$D \propto P_{As_4 }^{ - m} $$ \end{document}, where m≈0.4. The experimental data obtained are interpreted in terms of the concept of the dissociative mechanism of migration of Cr atoms in GaAs. More... »

PAGES

262-265

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1682323

DOI

http://dx.doi.org/10.1134/1.1682323

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1001190067


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