Si/Ge nanostructures for optoelectronics applications View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2004-01

AUTHORS

V. A. Egorov, G. É. Cirlin, A. A. Tonkikh, V. G. Talalaev, A. G. Makarov, N. N. Ledentsov, V. M. Ustinov, N. D. Zakharov, P. Werner

ABSTRACT

The optical and structural properties of multilayer Si/Ge structures with precritical, as well as close-to-critical, germanium inclusions in a silicon matrix, for which the transition from the two-dimensional to island growth occurs, were studied. The possibility of obtaining intense photoluminescence at room temperature in both cases under optimally chosen growth parameters is demonstrated. The proposed approaches to producing an active region appear promising for applications in silicon-based optoelectronics. More... »

PAGES

49-55

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1641919

DOI

http://dx.doi.org/10.1134/1.1641919

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1052927656


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