A tunneling spectroscopy study of the temperature dependence of the forbidden band in Bi2Te3 and Sb2Te3 View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-12

AUTHORS

V. A. Kul’bachinskii, H. Ozaki, Y. Miyahara, K. Funagai

ABSTRACT

Tunneling measurements of dI/dV, d2I/dV2, and d3I/dV3 were formed along the C3 axis (normally to layers) for Bi2Te3 and Sb2Te3 layered semiconductors in the temperature range 4.229 5 K. Temperature dependences of the forbidden band energy Eg were obtained. The forbidden band energy in Bi2Te3 was 0.20 eV at room temperature and increased to 0.24 eV at T=4.2 K. The Eg value for Sb2Te3 was 0.25 eV at 295 K and 0.26 eV at 4.2 K. The distance between the top of the higher valence band of light holes and the top of the valence band of heavy holes situated lower was found to be ΔEV≈19 meV in Bi2Te3; this distance was independent of temperature. The conduction bands of Bi2Te3 and Sb2Te3 each contain two extrema with distances between them of ΔEc≈25 and 30 meV, respectively. More... »

PAGES

1212-1218

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1641903

DOI

http://dx.doi.org/10.1134/1.1641903

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1051918573


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