Lasing at 1.5 µm in quantum dot structures on GaAs substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-12

AUTHORS

A. E. Zhukov, A. P. Vasil’yev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, A. Yu. Egorov, V. A. Odnoblyudov, N. A. Maleev, E. V. Nikitina, N. V. Kryjanovskaya, A. G. Gladyshev, Yu. M. Shernyakov, M. V. Maximov, N. N. Ledentsov, V. M. Ustinov, Zh. I. Alferov

ABSTRACT

Lasing at 1488–1515 nm in the temperature range 20–83°C was obtained in structures with an active region based on multiply stacked arrays of self-organized quantum dots grown on GaAs substrates. The threshold current density of a laser with four cleaved facets was 800 A/cm2 at room temperature. The method of wavelength extension is based on the use of a metamorphic buffer layer with an In content of about 20% intended for relieving the lattice mismatch stress. More... »

PAGES

1411-1413

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1634663

DOI

http://dx.doi.org/10.1134/1.1634663

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1022497601


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