Room-temperature 1.5–1.6 µm photoluminescence from InGaAs/GaAs heterostructures grown at low substrate temperature View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-12

AUTHORS

A. A. Tonkikh, G. E. Tsyrlin, V. G. Talalaev, B. V. Novikov, V. A. Egorov, N. K. Polyakov, Yu. B. Samsonenko, V. M. Ustinov, N. D. Zakharov, P. Werner

ABSTRACT

Heterostructures with In(Ga)As/GaAs quantum dots and quantum wells grown at low substrate temperature were studied by reflection high-energy electron diffraction, transmission electron microscopy, and photoluminescence methods. It is shown that InAs deposited onto (100) GaAs surface at low substrate temperature forms 2D clusters composed of separate quantum dots. Optical spectra of structures containing such clusters demonstrate emission in the 1.5–1.6 µm range. More... »

PAGES

1406-1410

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1634662

DOI

http://dx.doi.org/10.1134/1.1634662

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1025449793


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