Optical properties of MBE-grown ultrathin GaAsN insertions in GaAs matrix View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-11

AUTHORS

N. V. Kryzhanovskaya, A. G. Gladyshev, A. R. Kovsh, I. P. Soshnikov, A. F. Tsatsul’nikov, H. Kirmse, W. Neumann, J. Y. Chi, J. S. Wang, L. Wei, N. N. Ledentsov, V. M. Ustinov

ABSTRACT

Optical properties of MBE-grown ultrathin GaAsN insertions in a GaAs matrix have been studied, with the goal of deriving methods for the intentional formation of carrier localization regions in GaAsN layers. In the case of a short-period GaAs/GaAsN superlattice, an additional long-wavelength line is observed in the photoluminescence spectrum. Comparison of the optical data with the transmission electron microscopy data shows that this line is related to the emission from the formed regions enriched with nitrogen (up to 8.5%). The characteristic size of these nitrogen-enriched regions in upper layers of the superlattice is larger than in lower ones, and it increases with the number of the deposited layers increasing. More... »

PAGES

1326-1330

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1626218

DOI

http://dx.doi.org/10.1134/1.1626218

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1007121303


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