Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-10

AUTHORS

I. I. Novikov, M. V. Maksimov, Yu. M. Shernyakov, N. Yu. Gordeev, A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, N. A. Maleev, A. P. Vasil’ev, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg

ABSTRACT

The temperature behavior of the operation characteristics of low-threshold (the threshold current density is below 100 A/cm2) high-efficiency (differential quantum efficiency is as high as 88%) injection laser heterostructures is studied. The active region of structures emitting in the range from 1.25 to 1.29 µm included two, five, and ten layers of InAs-GaAs quantum dots. It is shown that both the threshold current density and the external differential quantum efficiency become N-shaped functions of temperature as the distribution of carriers in the active region changes from nonequilibrium to equilibrium one. More... »

PAGES

1239-1242

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1619525

DOI

http://dx.doi.org/10.1134/1.1619525

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1039309426


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