Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-10

AUTHORS

N. A. Maleev, A. P. Kovsh, A. E. Zhukov, A. P. Vasil’ev, S. S. Mikhrin, A. G. Kuz’menkov, D. A. Bedarev, Yu. M. Zadiranov, M. M. Kulagina, Yu. M. Shernyakov, A. S. Shulenkov, V. A. Bykovskii, Yu. M. Solov’ev, C. Möller, N. N. Ledentsov, V. M. Ustinov

ABSTRACT

Design and technology problems in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) equipped with nonconducting distributed Bragg reflectors (DBRs) and fabricated using molecular-beam epitaxy are considered. VCSELs with an active region were formed on the basis of InGaAs quantum wells and incorporated an AlGaAs/GaAs bottom DBR and an oxidized AlGaO/GaAs top DBR; the diameter of the oxidized aperture was equal to 7–12 µm. The devices exhibit a continuous-wave lasing at room temperature with threshold currents of 0.5–1.5 mA, a differential efficiency as high as 0.5 mW/mA, and a highest output power of 3 mW. More... »

PAGES

1234-1238

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1619524

DOI

http://dx.doi.org/10.1134/1.1619524

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1036212651


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