The effect of postgrowth annealing on the structure and optical properties of multilayer Ge/Si heterostructures View Full Text


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Article Info

DATE

2003-09

AUTHORS

A. A. Tonkikh, V. G. Talalaev, N. D. Zakharov, G. E. Cirlin, V. M. Ustinov, P. Werner

ABSTRACT

The effect of the postgrowth laser and thermal annealing on the structure and optical properties of multilayer heterostructures comprising quantum dots of germanium in a silicon matrix has been studied by photoluminescence (PL) and transmission electron microscopy (TEM). The PL spectra of annealed samples reveal a decrease of emission from the quantum dots and display a new emission band as compared to the initial spectra. The TEM measurements show that this effect is related to smearing of the Ge-Si interface and to the appearance of a regular rectangular network of dislocations on the surface of the annealed structure. More... »

PAGES

739-742

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1615551

DOI

http://dx.doi.org/10.1134/1.1615551

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1036945987


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