Temperature variation of the morphology of nanocluster ensembles in the Ge/Si(100) system View Full Text


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Article Info

DATE

2003-09

AUTHORS

V. G. Dubrovskii, V. M. Ustinov, A. A. Tonkikh, V. A. Egorov, G. E. Cirlin, P. Werner

ABSTRACT

The morphological characteristics of hut-cluster ensembles formed in a Ge/Si(100) heteroepitaxial system have been studied as functions of the substrate surface temperature by theoretical methods and by atomic force microscopy. As the temperature increases from 420 to 500°C, the lateral size of nanoclusters with a square base (grown at the same rate of 0.0345 ML/s to a total coverage of 6.2 ML) grows from 12 to 20 nm, while their number density on the substrate surface drops from 5.6×1010 to 1.5×1010 cm−2. Predictions of a kinetic model are in sufficiently good agreement with the experimental data. More... »

PAGES

721-724

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1615546

DOI

http://dx.doi.org/10.1134/1.1615546

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1043595429


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