Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-09

AUTHORS

A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, A. P. Vasil’ev, E. V. Nikitina, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. M. Shernyakov, Yu. G. Musikhin, M. V. Maksimov, N. N. Ledentsov, V. M. Ustinov, Zh. I. Alferov

ABSTRACT

A new method for the epitaxial formation of 1.3-µm injection lasers on GaAs substrates is reported. A metamorphic heterostructure with an In content of about 20% is deposited onto an intermediate buffer layer intended for mismatch strain relaxation. The laser active region is formed by quantum wells with a higher In content (about 40%). Lasers with 100-µm-wide stripes demonstrate room-temperature lasing at 1.29 µm with a minimum threshold current density of 3.3 kA cm2 (0.4 kA cm2 at T=85 K). More... »

PAGES

1119-1122

Journal

TITLE

Semiconductors

ISSUE

9

VOLUME

37

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1610131

DOI

http://dx.doi.org/10.1134/1.1610131

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1012691552


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