Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on gaas substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-09

AUTHORS

E. S. Semenova, A. E. Zhukov, A. P. Vasil’ev, S. S. Mikhrin, A. R. Kovsh, V. M. Ustinov, Yu. G. Musikhin, S. A. Blokhin, A. G. Gladyshev, N. N. Ledentsov

ABSTRACT

Metamorphic modulation-doped InGaAs/InAlAs heterostructures have been MBE-grown on GaAs substrates. The optimization of low-temperature growth conditions for a graded-composition buffer layer made it possible to reduce the amount of structural defects in the active layers of the structure. The electron mobility in the 2D channel of metamorphic structures grown under optimum conditions (8100 cm2/V s at 300 K) noticeably exceeds the values achievable in strained InGaAs/AlGaAs heterostructures on GaAs substrates. More... »

PAGES

1104-1106

Journal

TITLE

Semiconductors

ISSUE

9

VOLUME

37

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1610128

DOI

http://dx.doi.org/10.1134/1.1610128

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1029486191


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Semenova", 
        "givenName": "E. S.", 
        "id": "sg:person.010767406335.85", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010767406335.85"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhukov", 
        "givenName": "A. E.", 
        "id": "sg:person.011315427765.17", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011315427765.17"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vasil\u2019ev", 
        "givenName": "A. P.", 
        "id": "sg:person.014334030356.12", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014334030356.12"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mikhrin", 
        "givenName": "S. S.", 
        "id": "sg:person.015715061126.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015715061126.30"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kovsh", 
        "givenName": "A. R.", 
        "id": "sg:person.015242115543.03", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015242115543.03"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ustinov", 
        "givenName": "V. M.", 
        "id": "sg:person.010616411412.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010616411412.30"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Musikhin", 
        "givenName": "Yu. G.", 
        "id": "sg:person.014603755431.88", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014603755431.88"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Blokhin", 
        "givenName": "S. A.", 
        "id": "sg:person.015523476101.77", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015523476101.77"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gladyshev", 
        "givenName": "A. G.", 
        "id": "sg:person.0727403305.59", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0727403305.59"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ledentsov", 
        "givenName": "N. N.", 
        "id": "sg:person.010471344702.36", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010471344702.36"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/0022-0248(95)80135-y", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1002269135"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-0248(95)80135-y", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1002269135"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.122582", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057686739"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/16.3331", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061094004"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/5.135374", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061178870"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/55.709638", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061189008"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.590707", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062200752"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2003-09", 
    "datePublishedReg": "2003-09-01", 
    "description": "Metamorphic modulation-doped InGaAs/InAlAs heterostructures have been MBE-grown on GaAs substrates. The optimization of low-temperature growth conditions for a graded-composition buffer layer made it possible to reduce the amount of structural defects in the active layers of the structure. The electron mobility in the 2D channel of metamorphic structures grown under optimum conditions (8100 cm2/V s at 300 K) noticeably exceeds the values achievable in strained InGaAs/AlGaAs heterostructures on GaAs substrates.", 
    "genre": "non_research_article", 
    "id": "sg:pub.10.1134/1.1610128", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "9", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "37"
      }
    ], 
    "name": "Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on gaas substrates", 
    "pagination": "1104-1106", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "8c779b87b8efe695ede7d081dbde00d95ff7be8815b73288b9d8c691beec2ec7"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1610128"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1029486191"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1610128", 
      "https://app.dimensions.ai/details/publication/pub.1029486191"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T01:04", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8697_00000500.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134/1.1610128"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/1.1610128'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/1.1610128'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/1.1610128'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/1.1610128'


 

This table displays all metadata directly associated to this object as RDF triples.

142 TRIPLES      21 PREDICATES      33 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1610128 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N625aca76cced40578af47468856d052d
4 schema:citation https://doi.org/10.1016/0022-0248(95)80135-y
5 https://doi.org/10.1063/1.122582
6 https://doi.org/10.1109/16.3331
7 https://doi.org/10.1109/5.135374
8 https://doi.org/10.1109/55.709638
9 https://doi.org/10.1116/1.590707
10 schema:datePublished 2003-09
11 schema:datePublishedReg 2003-09-01
12 schema:description Metamorphic modulation-doped InGaAs/InAlAs heterostructures have been MBE-grown on GaAs substrates. The optimization of low-temperature growth conditions for a graded-composition buffer layer made it possible to reduce the amount of structural defects in the active layers of the structure. The electron mobility in the 2D channel of metamorphic structures grown under optimum conditions (8100 cm2/V s at 300 K) noticeably exceeds the values achievable in strained InGaAs/AlGaAs heterostructures on GaAs substrates.
13 schema:genre non_research_article
14 schema:inLanguage en
15 schema:isAccessibleForFree false
16 schema:isPartOf N295737c615ae4349830416e85d8448f6
17 Ne468a611b9794427b46948cbb317f06b
18 sg:journal.1136692
19 schema:name Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on gaas substrates
20 schema:pagination 1104-1106
21 schema:productId N13b19439f41b4b9887a608de7bc55aae
22 N23aa448a054841c7a841bb8564a1a13d
23 N61b69a34b57544958fafd7543f0eddf1
24 schema:sameAs https://app.dimensions.ai/details/publication/pub.1029486191
25 https://doi.org/10.1134/1.1610128
26 schema:sdDatePublished 2019-04-11T01:04
27 schema:sdLicense https://scigraph.springernature.com/explorer/license/
28 schema:sdPublisher Nffadeb1b16b34fd3add5906b0c85ce08
29 schema:url http://link.springer.com/10.1134/1.1610128
30 sgo:license sg:explorer/license/
31 sgo:sdDataset articles
32 rdf:type schema:ScholarlyArticle
33 N13b19439f41b4b9887a608de7bc55aae schema:name readcube_id
34 schema:value 8c779b87b8efe695ede7d081dbde00d95ff7be8815b73288b9d8c691beec2ec7
35 rdf:type schema:PropertyValue
36 N23aa448a054841c7a841bb8564a1a13d schema:name dimensions_id
37 schema:value pub.1029486191
38 rdf:type schema:PropertyValue
39 N295737c615ae4349830416e85d8448f6 schema:volumeNumber 37
40 rdf:type schema:PublicationVolume
41 N311533eeb15f4d63ae4f9920b9d2f51a rdf:first sg:person.015242115543.03
42 rdf:rest Nfd5c8d2b3f234594a00893b8b03cc1c3
43 N3675800d917842a0b2c5e209c16ee874 rdf:first sg:person.015523476101.77
44 rdf:rest Nd81bd29a0c81405e8910741c535f8052
45 N53797d106fc7466386c987ad8cbed123 rdf:first sg:person.011315427765.17
46 rdf:rest N8896bd945f6c4d2db6c479e75bef2354
47 N61b69a34b57544958fafd7543f0eddf1 schema:name doi
48 schema:value 10.1134/1.1610128
49 rdf:type schema:PropertyValue
50 N625aca76cced40578af47468856d052d rdf:first sg:person.010767406335.85
51 rdf:rest N53797d106fc7466386c987ad8cbed123
52 N6694e68b5a954d37b662c1f44c79eb4a rdf:first sg:person.010471344702.36
53 rdf:rest rdf:nil
54 N6d1db60c3d954566b7fe5bd9c0529902 rdf:first sg:person.014603755431.88
55 rdf:rest N3675800d917842a0b2c5e209c16ee874
56 N7e6e1267ba8e41ac92655c0c4b31305c rdf:first sg:person.015715061126.30
57 rdf:rest N311533eeb15f4d63ae4f9920b9d2f51a
58 N8896bd945f6c4d2db6c479e75bef2354 rdf:first sg:person.014334030356.12
59 rdf:rest N7e6e1267ba8e41ac92655c0c4b31305c
60 Nd81bd29a0c81405e8910741c535f8052 rdf:first sg:person.0727403305.59
61 rdf:rest N6694e68b5a954d37b662c1f44c79eb4a
62 Ne468a611b9794427b46948cbb317f06b schema:issueNumber 9
63 rdf:type schema:PublicationIssue
64 Nfd5c8d2b3f234594a00893b8b03cc1c3 rdf:first sg:person.010616411412.30
65 rdf:rest N6d1db60c3d954566b7fe5bd9c0529902
66 Nffadeb1b16b34fd3add5906b0c85ce08 schema:name Springer Nature - SN SciGraph project
67 rdf:type schema:Organization
68 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
69 schema:name Engineering
70 rdf:type schema:DefinedTerm
71 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
72 schema:name Materials Engineering
73 rdf:type schema:DefinedTerm
74 sg:journal.1136692 schema:issn 1063-7826
75 1090-6479
76 schema:name Semiconductors
77 rdf:type schema:Periodical
78 sg:person.010471344702.36 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
79 schema:familyName Ledentsov
80 schema:givenName N. N.
81 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010471344702.36
82 rdf:type schema:Person
83 sg:person.010616411412.30 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
84 schema:familyName Ustinov
85 schema:givenName V. M.
86 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010616411412.30
87 rdf:type schema:Person
88 sg:person.010767406335.85 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
89 schema:familyName Semenova
90 schema:givenName E. S.
91 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010767406335.85
92 rdf:type schema:Person
93 sg:person.011315427765.17 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
94 schema:familyName Zhukov
95 schema:givenName A. E.
96 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011315427765.17
97 rdf:type schema:Person
98 sg:person.014334030356.12 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
99 schema:familyName Vasil’ev
100 schema:givenName A. P.
101 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014334030356.12
102 rdf:type schema:Person
103 sg:person.014603755431.88 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
104 schema:familyName Musikhin
105 schema:givenName Yu. G.
106 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014603755431.88
107 rdf:type schema:Person
108 sg:person.015242115543.03 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
109 schema:familyName Kovsh
110 schema:givenName A. R.
111 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015242115543.03
112 rdf:type schema:Person
113 sg:person.015523476101.77 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
114 schema:familyName Blokhin
115 schema:givenName S. A.
116 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015523476101.77
117 rdf:type schema:Person
118 sg:person.015715061126.30 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
119 schema:familyName Mikhrin
120 schema:givenName S. S.
121 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015715061126.30
122 rdf:type schema:Person
123 sg:person.0727403305.59 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
124 schema:familyName Gladyshev
125 schema:givenName A. G.
126 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0727403305.59
127 rdf:type schema:Person
128 https://doi.org/10.1016/0022-0248(95)80135-y schema:sameAs https://app.dimensions.ai/details/publication/pub.1002269135
129 rdf:type schema:CreativeWork
130 https://doi.org/10.1063/1.122582 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057686739
131 rdf:type schema:CreativeWork
132 https://doi.org/10.1109/16.3331 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061094004
133 rdf:type schema:CreativeWork
134 https://doi.org/10.1109/5.135374 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061178870
135 rdf:type schema:CreativeWork
136 https://doi.org/10.1109/55.709638 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061189008
137 rdf:type schema:CreativeWork
138 https://doi.org/10.1116/1.590707 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062200752
139 rdf:type schema:CreativeWork
140 https://www.grid.ac/institutes/grid.423485.c schema:alternateName Ioffe Institute
141 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
142 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...