Optical and structural properties of ingaasp miscibility-gap solid solutions grown by MOVPE on GaAs(001) substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-09

AUTHORS

L. S. Vavilova, D. A. Vinokurov, V. A. Kapitonov, A. V. Murashova, V. N. Nevedomskii, N. K. Poletaev, A. A. Sitnikova, I. S. Tarasov, V. V. Shamakhov

ABSTRACT

Optical and structural properties of InGaAsP solid solutions grown by MOVPE at 600°C on GaAs(001) substrates are studied. The photoluminescence spectra of InGaAsP solid solutions with a composition corresponding to the miscibility gap contain a main band and an additional auxiliary band. It is established that both bands are related to band-to-band radiative transitions; i. e., the studied layer includes two solid solutions with different compositions and different band gaps. It is shown that the observed high-energy shift of the additional band with an increasing level of excitation is governed by the nanometer size of domains in the corresponding solid solution. This conclusion is consistent with the results of TEM study, which revealed the presence of a periodic structure comprised of alternating domains with different compositions. This structure of alternating domains extends along the [100] and [010] directions with a characteristic period of 10 nm. More... »

PAGES

1080-1084

References to SciGraph publications

  • 1995-11. Metalorganic vapor phase epitaxial growth of GaInAsP/GaAs in JOURNAL OF ELECTRONIC MATERIALS
  • Journal

    TITLE

    Semiconductors

    ISSUE

    9

    VOLUME

    37

    Author Affiliations

    Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/1.1610123

    DOI

    http://dx.doi.org/10.1134/1.1610123

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1020740983


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