The transition from 2D to 3D nanoclusters of silicon carbide on silicon View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-08

AUTHORS

Yu. V. Trushin, K. L. Safonov, O. Ambacher, J. Pezoldt

ABSTRACT

We have evaluated the critical average distance between the nanoclusters of silicon carbide grown by molecular beam epitaxy on silicon and estimated the time of the transition from two-to three-dimensional growth.

PAGES

663-665

References to SciGraph publications

Journal

TITLE

Technical Physics Letters

ISSUE

8

VOLUME

29

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1606782

DOI

http://dx.doi.org/10.1134/1.1606782

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1030083243


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