Longwave generation in laser structures based on InGaAs(N) quantum wells on GaAs substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-05

AUTHORS

V. A. Odnoblyudov, A. Yu. Egorov, A. R. Kovsh, V. V. Mamutin, E. V. Nikitina, Yu. M. Shernyakov, M. V. Maksimov, V. M. Ustinov

ABSTRACT

The MBE growth regime has been optimized for the obtaining of laser structures based on InGaAs(N)/GaAs quantum wells (QWs) with high indium content. Structures containing InGaAs and InGaAsN isolated QWs exhibit low-threshold longwave emission at room temperature. Lasers based on QWs of the In0.35GaAs and In0.35GaAsN0.023 types are characterized by the radiation wavelengths λ=1.085 and 1.295 μm at a threshold current density of 60 and 350 A/cm2, respectively. More... »

PAGES

433-434

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1579817

DOI

http://dx.doi.org/10.1134/1.1579817

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1026897526


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