Ontology type: schema:ScholarlyArticle
2003-05
AUTHORSM. G. Mynbaeva, A. A. Lavrent’ev, N. I. Kuznetsov, A. N. Kuznetsov, K. D. Mynbaev, A. A. Lebedev
ABSTRACTSemi-insulating silicon carbide layers have been obtained by diffusion of vanadium into porous 4H-SiC. The diffusion was performed from a film deposited by cosputtering of silicon and vanadium, with the content of the latter equal to 20%. The diffusion profile of vanadium in porous silicon carbide has a complex structure with a fast diffusion coefficient of 7×10−15 cm2/s. The activation energy of the resistivity of vanadium-diffusion-doped porous SiC layers is 1.45 eV. The resistivity of vanadium-doped semi-insulating layers is 5×1011 Ω cm at 500 K, which exceeds the resistivity of undoped porous SiC by two orders of magnitude. The results obtained indicate that porous SiC is a promising material for semi-insulating substrates in device structures based on wide-bandgap semiconductors. More... »
PAGES594-597
http://scigraph.springernature.com/pub.10.1134/1.1575367
DOIhttp://dx.doi.org/10.1134/1.1575367
DIMENSIONShttps://app.dimensions.ai/details/publication/pub.1022783059
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[
{
"@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json",
"about": [
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Physical Sciences",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Condensed Matter Physics",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Quantum Physics",
"type": "DefinedTerm"
}
],
"author": [
{
"affiliation": {
"alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Mynbaeva",
"givenName": "M. G.",
"id": "sg:person.07660667737.36",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07660667737.36"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Crystal Growth Research Center, Nonprofit Partnership, 193036, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/None",
"name": [
"Crystal Growth Research Center, Nonprofit Partnership, 193036, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Lavrent\u2019ev",
"givenName": "A. A.",
"id": "sg:person.07655161301.87",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07655161301.87"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Kuznetsov",
"givenName": "N. I.",
"id": "sg:person.016621476105.04",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016621476105.04"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Kuznetsov",
"givenName": "A. N.",
"id": "sg:person.012436124105.42",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012436124105.42"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Mynbaev",
"givenName": "K. D.",
"id": "sg:person.010274772027.40",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010274772027.40"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Lebedev",
"givenName": "A. A.",
"id": "sg:person.011264364575.18",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18"
],
"type": "Person"
}
],
"citation": [
{
"id": "sg:pub.10.1557/s1092578300000703",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1025233837",
"https://doi.org/10.1557/s1092578300000703"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1557/proc-640-h1.2",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1067949616",
"https://doi.org/10.1557/proc-640-h1.2"
],
"type": "CreativeWork"
}
],
"datePublished": "2003-05",
"datePublishedReg": "2003-05-01",
"description": "Semi-insulating silicon carbide layers have been obtained by diffusion of vanadium into porous 4H-SiC. The diffusion was performed from a film deposited by cosputtering of silicon and vanadium, with the content of the latter equal to 20%. The diffusion profile of vanadium in porous silicon carbide has a complex structure with a fast diffusion coefficient of 7\u00d710\u221215 cm2/s. The activation energy of the resistivity of vanadium-diffusion-doped porous SiC layers is 1.45 eV. The resistivity of vanadium-doped semi-insulating layers is 5\u00d71011 \u03a9 cm at 500 K, which exceeds the resistivity of undoped porous SiC by two orders of magnitude. The results obtained indicate that porous SiC is a promising material for semi-insulating substrates in device structures based on wide-bandgap semiconductors.",
"genre": "article",
"id": "sg:pub.10.1134/1.1575367",
"inLanguage": "en",
"isAccessibleForFree": false,
"isPartOf": [
{
"id": "sg:journal.1136692",
"issn": [
"1063-7826",
"1090-6479"
],
"name": "Semiconductors",
"publisher": "Pleiades Publishing",
"type": "Periodical"
},
{
"issueNumber": "5",
"type": "PublicationIssue"
},
{
"type": "PublicationVolume",
"volumeNumber": "37"
}
],
"keywords": [
"silicon carbide layers",
"diffusion of vanadium",
"carbide layer",
"porous SiC",
"semi-insulating layer",
"wide bandgap semiconductors",
"porous silicon carbide",
"semi-insulating substrate",
"porous SiC layers",
"SiC layer",
"silicon carbide",
"device structure",
"promising material",
"cm2/s",
"resistivity",
"SiC",
"diffusion profiles",
"layer",
"activation energy",
"orders of magnitude",
"diffusion coefficient",
"complex structure",
"fast diffusion coefficient",
"diffusion",
"vanadium",
"carbide",
"silicon",
"films",
"semiconductors",
"structure",
"materials",
"substrate",
"energy",
"coefficient",
"magnitude",
"order",
"content",
"results",
"profile"
],
"name": "Semi-insulating silicon carbide layers obtained by diffusion of vanadium into porous 4H-SiC",
"pagination": "594-597",
"productId": [
{
"name": "dimensions_id",
"type": "PropertyValue",
"value": [
"pub.1022783059"
]
},
{
"name": "doi",
"type": "PropertyValue",
"value": [
"10.1134/1.1575367"
]
}
],
"sameAs": [
"https://doi.org/10.1134/1.1575367",
"https://app.dimensions.ai/details/publication/pub.1022783059"
],
"sdDataset": "articles",
"sdDatePublished": "2022-05-20T07:22",
"sdLicense": "https://scigraph.springernature.com/explorer/license/",
"sdPublisher": {
"name": "Springer Nature - SN SciGraph project",
"type": "Organization"
},
"sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_361.jsonl",
"type": "ScholarlyArticle",
"url": "https://doi.org/10.1134/1.1575367"
}
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