Semi-insulating silicon carbide layers obtained by diffusion of vanadium into porous 4H-SiC View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-05

AUTHORS

M. G. Mynbaeva, A. A. Lavrent’ev, N. I. Kuznetsov, A. N. Kuznetsov, K. D. Mynbaev, A. A. Lebedev

ABSTRACT

Semi-insulating silicon carbide layers have been obtained by diffusion of vanadium into porous 4H-SiC. The diffusion was performed from a film deposited by cosputtering of silicon and vanadium, with the content of the latter equal to 20%. The diffusion profile of vanadium in porous silicon carbide has a complex structure with a fast diffusion coefficient of 7×10−15 cm2/s. The activation energy of the resistivity of vanadium-diffusion-doped porous SiC layers is 1.45 eV. The resistivity of vanadium-doped semi-insulating layers is 5×1011 Ω cm at 500 K, which exceeds the resistivity of undoped porous SiC by two orders of magnitude. The results obtained indicate that porous SiC is a promising material for semi-insulating substrates in device structures based on wide-bandgap semiconductors. More... »

PAGES

594-597

References to SciGraph publications

  • 2000. HTCVD growth of semi-insulating 4H-SiC crystals with low defect density in MRS ADVANCES
  • 1999. Strain relaxation in GaN layers grown on porous GaN sublayers in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • Identifiers

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    http://scigraph.springernature.com/pub.10.1134/1.1575367

    DOI

    http://dx.doi.org/10.1134/1.1575367

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