Structural and optical properties of InAs quantum dots in AlGaAs matrix View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-05

AUTHORS

D. S. Sizov, Yu. B. Samsonenko, G. E. Tsyrlin, N. K. Polyakov, V. A. Egorov, A. A. Tonkikh, A. E. Zhukov, S. S. Mikhrin, A. P. Vasil’ev, Yu. G. Musikhin, A. F. Tsatsul’nikov, V. M. Ustinov, N. N. Ledentsov

ABSTRACT

Structural and optical properties of InAs quantum dots (QDs) grown in a wide-bandgap Al0.3Ga0.7As matrix is studied. It is shown that a high temperature stability of optical properties can be achieved owing to deep localization of carriers in a matrix whose band gap is wider than that in GaAs. Specific features of QD formation were studied for different amounts of deposited InAs. A steady red shift of the QD emission peak as far as ∼1.18 µm with the effective thickness of InAs in Al0.3Ga0.7As increasing was observed at room temperature. This made it possible to achieve a much higher energy of exciton localization than for QDs in a GaAs matrix. To obtain the maximum localization energy, the QD sheet was overgrown with an InGaAs layer. The possibility of reaching the emission wavelength of ~1.3 µm is demonstrated. More... »

PAGES

559-563

Journal

TITLE

Semiconductors

ISSUE

5

VOLUME

37

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1575361

DOI

http://dx.doi.org/10.1134/1.1575361

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1049510630


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