Ontology type: schema:ScholarlyArticle
2003-04
AUTHORSA. A. Lebedev, A. M. Strel’chuk, D. V. Davydov, N. S. Savkina, A. S. Tregubova, A. N. Kuznetsov, V. A. Solov’ev, N. K. Poletaev
ABSTRACTSublimation epitaxy in a vacuum has been employed to grow n-and p-type 3C-SiC layers on 6H-SiC substrates. Diodes have been fabricated on the basis of the p-n structure obtained, and their parameters have been studied by measuring their current-voltage and capacitance-voltage characteristics and by applying the DLTS and electroluminescence methods. It is shown that the characteristics of the diodes studied are close to those of diodes based on bulk 3C-SiC. A conclusion is made that sublimation epitaxy can be used to fabricate 3C-SiC p-n structures on substrates of other silicon carbide polytypes. More... »
PAGES482-484
http://scigraph.springernature.com/pub.10.1134/1.1568473
DOIhttp://dx.doi.org/10.1134/1.1568473
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