3C-SiC p-n structures grown by sublimation on 6H-SiC substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-04

AUTHORS

A. A. Lebedev, A. M. Strel’chuk, D. V. Davydov, N. S. Savkina, A. S. Tregubova, A. N. Kuznetsov, V. A. Solov’ev, N. K. Poletaev

ABSTRACT

Sublimation epitaxy in a vacuum has been employed to grow n-and p-type 3C-SiC layers on 6H-SiC substrates. Diodes have been fabricated on the basis of the p-n structure obtained, and their parameters have been studied by measuring their current-voltage and capacitance-voltage characteristics and by applying the DLTS and electroluminescence methods. It is shown that the characteristics of the diodes studied are close to those of diodes based on bulk 3C-SiC. A conclusion is made that sublimation epitaxy can be used to fabricate 3C-SiC p-n structures on substrates of other silicon carbide polytypes. More... »

PAGES

482-484

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1568473

DOI

http://dx.doi.org/10.1134/1.1568473

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1024712995


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lebedev", 
        "givenName": "A. A.", 
        "id": "sg:person.011264364575.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Strel\u2019chuk", 
        "givenName": "A. M.", 
        "id": "sg:person.07471541177.43", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07471541177.43"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Davydov", 
        "givenName": "D. V.", 
        "id": "sg:person.013204575705.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013204575705.73"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Savkina", 
        "givenName": "N. S.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tregubova", 
        "givenName": "A. S.", 
        "id": "sg:person.014577536705.39", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014577536705.39"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kuznetsov", 
        "givenName": "A. N.", 
        "id": "sg:person.012436124105.42", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012436124105.42"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Solov\u2019ev", 
        "givenName": "V. A.", 
        "id": "sg:person.011046022406.09", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011046022406.09"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Poletaev", 
        "givenName": "N. K.", 
        "id": "sg:person.07541267211.59", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07541267211.59"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1007/978-1-4613-3273-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1002821344", 
          "https://doi.org/10.1007/978-1-4613-3273-2"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2003-04", 
    "datePublishedReg": "2003-04-01", 
    "description": "Sublimation epitaxy in a vacuum has been employed to grow n-and p-type 3C-SiC layers on 6H-SiC substrates. Diodes have been fabricated on the basis of the p-n structure obtained, and their parameters have been studied by measuring their current-voltage and capacitance-voltage characteristics and by applying the DLTS and electroluminescence methods. It is shown that the characteristics of the diodes studied are close to those of diodes based on bulk 3C-SiC. A conclusion is made that sublimation epitaxy can be used to fabricate 3C-SiC p-n structures on substrates of other silicon carbide polytypes.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/1.1568473", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "4", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "37"
      }
    ], 
    "keywords": [
      "n structure", 
      "capacitance-voltage characteristics", 
      "bulk 3C-SiC.", 
      "silicon carbide polytypes", 
      "sublimation epitaxy", 
      "electroluminescence method", 
      "diodes", 
      "substrate", 
      "sublimation", 
      "epitaxy", 
      "structure", 
      "layer", 
      "characteristics", 
      "vacuum", 
      "polytypes", 
      "parameters", 
      "method", 
      "DLT", 
      "basis", 
      "conclusion"
    ], 
    "name": "3C-SiC p-n structures grown by sublimation on 6H-SiC substrates", 
    "pagination": "482-484", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1024712995"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1568473"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1568473", 
      "https://app.dimensions.ai/details/publication/pub.1024712995"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:22", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_365.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/1.1568473"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

134 TRIPLES      22 PREDICATES      48 URIs      38 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1568473 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author Nee602efc53534b058ae11ffdc134a7fd
5 schema:citation sg:pub.10.1007/978-1-4613-3273-2
6 schema:datePublished 2003-04
7 schema:datePublishedReg 2003-04-01
8 schema:description Sublimation epitaxy in a vacuum has been employed to grow n-and p-type 3C-SiC layers on 6H-SiC substrates. Diodes have been fabricated on the basis of the p-n structure obtained, and their parameters have been studied by measuring their current-voltage and capacitance-voltage characteristics and by applying the DLTS and electroluminescence methods. It is shown that the characteristics of the diodes studied are close to those of diodes based on bulk 3C-SiC. A conclusion is made that sublimation epitaxy can be used to fabricate 3C-SiC p-n structures on substrates of other silicon carbide polytypes.
9 schema:genre article
10 schema:inLanguage en
11 schema:isAccessibleForFree false
12 schema:isPartOf N4175bb93edd14585af5b7663c42bc3a5
13 Naa4b64b492fc49e6922b61f337a1b95a
14 sg:journal.1136692
15 schema:keywords DLT
16 basis
17 bulk 3C-SiC.
18 capacitance-voltage characteristics
19 characteristics
20 conclusion
21 diodes
22 electroluminescence method
23 epitaxy
24 layer
25 method
26 n structure
27 parameters
28 polytypes
29 silicon carbide polytypes
30 structure
31 sublimation
32 sublimation epitaxy
33 substrate
34 vacuum
35 schema:name 3C-SiC p-n structures grown by sublimation on 6H-SiC substrates
36 schema:pagination 482-484
37 schema:productId N25a5a3a52f2c4649af2429e89fe62e5e
38 Nfe57e555c68e459fb799e5ba8c812d33
39 schema:sameAs https://app.dimensions.ai/details/publication/pub.1024712995
40 https://doi.org/10.1134/1.1568473
41 schema:sdDatePublished 2022-05-20T07:22
42 schema:sdLicense https://scigraph.springernature.com/explorer/license/
43 schema:sdPublisher N22a2fb91f5ce46c687260ae8f241bf74
44 schema:url https://doi.org/10.1134/1.1568473
45 sgo:license sg:explorer/license/
46 sgo:sdDataset articles
47 rdf:type schema:ScholarlyArticle
48 N0c7aee0df5c94503ace4488ddc7a7806 rdf:first sg:person.013204575705.73
49 rdf:rest Ned47f5dfb0d1447c83493294e98f5805
50 N1ca3a6ebf9f64922974ffb0bcaba09c2 rdf:first sg:person.011046022406.09
51 rdf:rest N47f47dc70b124c19a8966fe564afb84a
52 N22a2fb91f5ce46c687260ae8f241bf74 schema:name Springer Nature - SN SciGraph project
53 rdf:type schema:Organization
54 N25a5a3a52f2c4649af2429e89fe62e5e schema:name doi
55 schema:value 10.1134/1.1568473
56 rdf:type schema:PropertyValue
57 N4175bb93edd14585af5b7663c42bc3a5 schema:volumeNumber 37
58 rdf:type schema:PublicationVolume
59 N47f47dc70b124c19a8966fe564afb84a rdf:first sg:person.07541267211.59
60 rdf:rest rdf:nil
61 N58f30eae1e6742048d9cca3e34a7c6c4 rdf:first sg:person.012436124105.42
62 rdf:rest N1ca3a6ebf9f64922974ffb0bcaba09c2
63 N6c1b7f4da06344de9e60e082c486ca01 schema:affiliation grid-institutes:grid.423485.c
64 schema:familyName Savkina
65 schema:givenName N. S.
66 rdf:type schema:Person
67 N7aca9b27707440d5af27199de89424e0 rdf:first sg:person.07471541177.43
68 rdf:rest N0c7aee0df5c94503ace4488ddc7a7806
69 Naa4b64b492fc49e6922b61f337a1b95a schema:issueNumber 4
70 rdf:type schema:PublicationIssue
71 Nb2df129093af4e73a3956014a308bebf rdf:first sg:person.014577536705.39
72 rdf:rest N58f30eae1e6742048d9cca3e34a7c6c4
73 Ned47f5dfb0d1447c83493294e98f5805 rdf:first N6c1b7f4da06344de9e60e082c486ca01
74 rdf:rest Nb2df129093af4e73a3956014a308bebf
75 Nee602efc53534b058ae11ffdc134a7fd rdf:first sg:person.011264364575.18
76 rdf:rest N7aca9b27707440d5af27199de89424e0
77 Nfe57e555c68e459fb799e5ba8c812d33 schema:name dimensions_id
78 schema:value pub.1024712995
79 rdf:type schema:PropertyValue
80 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
81 schema:name Physical Sciences
82 rdf:type schema:DefinedTerm
83 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
84 schema:name Condensed Matter Physics
85 rdf:type schema:DefinedTerm
86 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
87 schema:name Quantum Physics
88 rdf:type schema:DefinedTerm
89 sg:journal.1136692 schema:issn 1063-7826
90 1090-6479
91 schema:name Semiconductors
92 schema:publisher Pleiades Publishing
93 rdf:type schema:Periodical
94 sg:person.011046022406.09 schema:affiliation grid-institutes:grid.423485.c
95 schema:familyName Solov’ev
96 schema:givenName V. A.
97 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011046022406.09
98 rdf:type schema:Person
99 sg:person.011264364575.18 schema:affiliation grid-institutes:grid.423485.c
100 schema:familyName Lebedev
101 schema:givenName A. A.
102 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18
103 rdf:type schema:Person
104 sg:person.012436124105.42 schema:affiliation grid-institutes:grid.423485.c
105 schema:familyName Kuznetsov
106 schema:givenName A. N.
107 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012436124105.42
108 rdf:type schema:Person
109 sg:person.013204575705.73 schema:affiliation grid-institutes:grid.423485.c
110 schema:familyName Davydov
111 schema:givenName D. V.
112 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013204575705.73
113 rdf:type schema:Person
114 sg:person.014577536705.39 schema:affiliation grid-institutes:grid.423485.c
115 schema:familyName Tregubova
116 schema:givenName A. S.
117 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014577536705.39
118 rdf:type schema:Person
119 sg:person.07471541177.43 schema:affiliation grid-institutes:grid.423485.c
120 schema:familyName Strel’chuk
121 schema:givenName A. M.
122 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07471541177.43
123 rdf:type schema:Person
124 sg:person.07541267211.59 schema:affiliation grid-institutes:grid.423485.c
125 schema:familyName Poletaev
126 schema:givenName N. K.
127 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07541267211.59
128 rdf:type schema:Person
129 sg:pub.10.1007/978-1-4613-3273-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1002821344
130 https://doi.org/10.1007/978-1-4613-3273-2
131 rdf:type schema:CreativeWork
132 grid-institutes:grid.423485.c schema:alternateName Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
133 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
134 rdf:type schema:Organization
 




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