Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-01

AUTHORS

E. Yu. Lundina, Yu. M. Shernyakov, M. V. Maksimov, I. N. Kayander, A. F. Tsatsul’nikov, N. N. Ledentsov, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, Zh. I. Alferov, D. Bimberg

ABSTRACT

Accelerated degradation testing of long-wavelength (>1.25 µm) quantum-dot lasers made on GaAs substrates is carried out at a fixed current of 1.7 A, initial optical output of about 0.3 W, and a heat sink temperature of 60°C. No signs of degradation are revealed after testing for 450 h. The test bed is not sealed, inert gas purging is not performed, and the laser faces are not passivated. More... »

PAGES

131-132

References to SciGraph publications

  • 1999. Basics of MBE growth in GROWTH PROCESSES AND SURFACE PHASE EQUILIBRIA IN MOLECULAR BEAM EPITAXY
  • Identifiers

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    http://scigraph.springernature.com/pub.10.1134/1.1538744

    DOI

    http://dx.doi.org/10.1134/1.1538744

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