Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide View Full Text


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Article Info

DATE

2002-11

AUTHORS

S. V. Vyshenski, U. Zeitler, R. J. Haug

ABSTRACT

Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a steplike voltage-current curve. Due to standard chemical properties, doping phosphorus atoms located in a certain domain of the dot form geometrically parallel current channels. The height of the current step typically equals (1.2 pA)N, where N=0, 1, 2, 3... is the number of doping atoms inside the domain, and only negligibly depends on the actual position of the dopants. The found conditions are feasible in experimentally available structures. More... »

PAGES

568-571

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1538291

DOI

http://dx.doi.org/10.1134/1.1538291

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1012797284


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