Ontology type: schema:ScholarlyArticle
2002-12
AUTHORSA. A. Lebedev, A. M. Strel’chuk, N. S. Savkina, E. V. Bogdanova, A. S. Tregubova, A. N. Kuznetsov, L. M. Sorokin
ABSTRACTA heterostructure of the p−-3C-SiC/n+-6H-SiC type with modulated doping was synthesized by sublimation epitaxy in vacuum. Features of the current-voltage characteristics and the electroluminescence spectra show evidence of quantum confinement effects in a triangular quantum well at the heterojunction. The results indicate that the proposed technology employing sublimation epitaxy in vacuum can be used to obtain quantum-confined structures based on silicon carbide. More... »
PAGES1011-1014
http://scigraph.springernature.com/pub.10.1134/1.1535487
DOIhttp://dx.doi.org/10.1134/1.1535487
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