2002-12
AUTHORSO. N. Godisov, A. K. Kaliteevsky, A. Yu. Safronov, V. I. Korolev, B. Ya. Ber, V. Yu. Davydov, D. V. Denisov, M. A. Kaliteevsky, P. S. Kop’ev, A. P. Kovarsky, V. M. Ustinov, H. -J. Pohl
ABSTRACTMolecular-beam epitaxy with a solid source was used to grow silicon layers enriched with 28Si and 30Si isotopes to 99.93 and 99.34%, respectively. Secondary-ion mass spectrometry and Raman scattering spectroscopy were applied to demonstrate the high isotopic purity and crystal perfection of the layers obtained.
PAGES1400-1402
http://scigraph.springernature.com/pub.10.1134/1.1529253
DOIhttp://dx.doi.org/10.1134/1.1529253
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