Isotope-pure silicon layers grown by MBE View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2002-12

AUTHORS

O. N. Godisov, A. K. Kaliteevsky, A. Yu. Safronov, V. I. Korolev, B. Ya. Ber, V. Yu. Davydov, D. V. Denisov, M. A. Kaliteevsky, P. S. Kop’ev, A. P. Kovarsky, V. M. Ustinov, H. -J. Pohl

ABSTRACT

Molecular-beam epitaxy with a solid source was used to grow silicon layers enriched with 28Si and 30Si isotopes to 99.93 and 99.34%, respectively. Secondary-ion mass spectrometry and Raman scattering spectroscopy were applied to demonstrate the high isotopic purity and crystal perfection of the layers obtained.

PAGES

1400-1402

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1529253

DOI

http://dx.doi.org/10.1134/1.1529253

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1031801450


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