2002-12
AUTHORSO. N. Godisov, A. K. Kaliteevsky, A. Yu. Safronov, V. I. Korolev, P. N. Aruev, B. Ya. Ber, V. Yu. Davydov, N. V. Zabrodskaya, V. V. Zabrodsky, M. A. Kaliteevsky, P. S. Kop’ev, A. P. Kovarsky, V. L. Sukhanov
ABSTRACTVapor-phase epitaxy was used to grow Si layers enriched to 99.96% with 28Si isotope. Secondary-ion mass spectrometry and Raman spectroscopy were used to demonstrate the high quality of the epitaxial material obtained.
PAGES1398-1399
http://scigraph.springernature.com/pub.10.1134/1.1529252
DOIhttp://dx.doi.org/10.1134/1.1529252
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