Electrical properties of CdxHg1−xTe and ZnxCdyHg1−x−yTe modified by low-energy ion bombardment View Full Text


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Article Info

DATE

2002-11

AUTHORS

K. D. Mynbaev, N. L. Bazhenov, V. A. Smirnov, V. I. Ivanov-Omskii

ABSTRACT

The phenomenon of conversion of the conductivity type in p-type samples of the CdxHg1−xTe (0.28≤x≤0.55) and ZnxCdyHg1−x−yTe solid solutions bombarded by low-energy argon ions was studied. It is shown that a necessary condition for the conversion effect in CdxHg1−xTe with 0.28≤x≤0.39 is ion neutralization in the bombarding beam. The dependence of the conversion layer thickness in CdxHg1−xTe on the solid solution composition agrees with that predicted by the diffusion model of ion-bombardment-induced conversion of the conductivity type. More... »

PAGES

955-957

References to SciGraph publications

  • 2000-03. Conductivity type conversion in Hg1-xCdxTe in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2000-06. SIMS quantification of As and In in Hg1−xCdxTe materials of different x values in JOURNAL OF ELECTRONIC MATERIALS
  • Identifiers

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    http://scigraph.springernature.com/pub.10.1134/1.1526895

    DOI

    http://dx.doi.org/10.1134/1.1526895

    DIMENSIONS

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