High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2002-11

AUTHORS

S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, A. P. Vasil’ev, E. S. Semenova, V. M. Ustinov, M. M. Kulagina, E. V. Nikitina, I. P. Soshnikov, Yu. M. Shernyakov, D. A. Livshits, N. V. Kryjanovskaya, D. S. Sizov, M. V. Maksimov, A. F. Tsatsul’nikov, N. N. Ledentsov, D. Bimberg, Zh. I. Alferov

ABSTRACT

Diode lasers based on several layers of self-organized quantum dots (QD) on GaAs substrates were studied. The lasing wavelength lies in the range λ=1.25–1.29 μm, depending on the number of QD layers and optical losses. A record external differential efficiency of 88% and the characteristic temperature of threshold current, 145 K, were obtained. The internal losses, and also threshold and spectral characteristics, are correlated with the optical gain and radiative recombination efficiency, which are strongly dependent on the design of the active region and growth modes. More... »

PAGES

1315-1321

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1521237

DOI

http://dx.doi.org/10.1134/1.1521237

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1038708650


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