Ontology type: schema:ScholarlyArticle
2002-09
AUTHORSA. A. Lebedev, A. M. Strel’chuk, D. V. Davydov, N. S. Savkina, A. N. Kuznetsov, L. M. Sorokin
ABSTRACTThe electrical characteristics of (p)3C-SiC-(n)6H-SiC epitaxial heterostructures obtained by sublimation epitaxy in vacuum are studied. The band discontinuities are determined and the energy band diagram of the heterojunction is constructed. It is shown that the obtained heterostructure offers a promising material for high electron mobility transistors.
PAGES792-794
http://scigraph.springernature.com/pub.10.1134/1.1511788
DOIhttp://dx.doi.org/10.1134/1.1511788
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