Electrical characteristics of (p)3C-SiC-(n)6H-SiC heterojunctions View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2002-09

AUTHORS

A. A. Lebedev, A. M. Strel’chuk, D. V. Davydov, N. S. Savkina, A. N. Kuznetsov, L. M. Sorokin

ABSTRACT

The electrical characteristics of (p)3C-SiC-(n)6H-SiC epitaxial heterostructures obtained by sublimation epitaxy in vacuum are studied. The band discontinuities are determined and the energy band diagram of the heterojunction is constructed. It is shown that the obtained heterostructure offers a promising material for high electron mobility transistors.

PAGES

792-794

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1511788

DOI

http://dx.doi.org/10.1134/1.1511788

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1019732688


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lebedev", 
        "givenName": "A. A.", 
        "id": "sg:person.011264364575.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Strel\u2019chuk", 
        "givenName": "A. M.", 
        "id": "sg:person.015012127015.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015012127015.53"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Davydov", 
        "givenName": "D. V.", 
        "id": "sg:person.013204575705.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013204575705.73"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Savkina", 
        "givenName": "N. S.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kuznetsov", 
        "givenName": "A. N.", 
        "id": "sg:person.012436124105.42", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012436124105.42"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sorokin", 
        "givenName": "L. M.", 
        "id": "sg:person.010730376716.55", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010730376716.55"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2002-09", 
    "datePublishedReg": "2002-09-01", 
    "description": "The electrical characteristics of (p)3C-SiC-(n)6H-SiC epitaxial heterostructures obtained by sublimation epitaxy in vacuum are studied. The band discontinuities are determined and the energy band diagram of the heterojunction is constructed. It is shown that the obtained heterostructure offers a promising material for high electron mobility transistors.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/1.1511788", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "0320-0116", 
          "0360-120X"
        ], 
        "name": "Technical Physics Letters", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "9", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "28"
      }
    ], 
    "keywords": [
      "electrical characteristics", 
      "high electron mobility transistors", 
      "electron mobility transistors", 
      "energy band diagram", 
      "mobility transistors", 
      "epitaxial heterostructures", 
      "promising material", 
      "SiC heterojunctions", 
      "sublimation epitaxy", 
      "band diagram", 
      "band discontinuity", 
      "SiC", 
      "heterojunction", 
      "heterostructures", 
      "transistors", 
      "epitaxy", 
      "characteristics", 
      "vacuum", 
      "materials", 
      "discontinuities", 
      "diagram"
    ], 
    "name": "Electrical characteristics of (p)3C-SiC-(n)6H-SiC heterojunctions", 
    "pagination": "792-794", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1019732688"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1511788"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1511788", 
      "https://app.dimensions.ai/details/publication/pub.1019732688"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:22", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_353.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/1.1511788"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

109 TRIPLES      21 PREDICATES      46 URIs      39 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1511788 schema:about anzsrc-for:02
2 schema:author N02622381597c422b8216a0c062470bd8
3 schema:datePublished 2002-09
4 schema:datePublishedReg 2002-09-01
5 schema:description The electrical characteristics of (p)3C-SiC-(n)6H-SiC epitaxial heterostructures obtained by sublimation epitaxy in vacuum are studied. The band discontinuities are determined and the energy band diagram of the heterojunction is constructed. It is shown that the obtained heterostructure offers a promising material for high electron mobility transistors.
6 schema:genre article
7 schema:inLanguage en
8 schema:isAccessibleForFree false
9 schema:isPartOf N03e359014bb9440da3a60051d04dbf6d
10 Na4be8f8221f54fbf8a01cdd0d20792ac
11 sg:journal.1136630
12 schema:keywords SiC
13 SiC heterojunctions
14 band diagram
15 band discontinuity
16 characteristics
17 diagram
18 discontinuities
19 electrical characteristics
20 electron mobility transistors
21 energy band diagram
22 epitaxial heterostructures
23 epitaxy
24 heterojunction
25 heterostructures
26 high electron mobility transistors
27 materials
28 mobility transistors
29 promising material
30 sublimation epitaxy
31 transistors
32 vacuum
33 schema:name Electrical characteristics of (p)3C-SiC-(n)6H-SiC heterojunctions
34 schema:pagination 792-794
35 schema:productId N3aa023437f894198b9070a26d65f3e04
36 Na172156933cd4130b86351d755fdc9a2
37 schema:sameAs https://app.dimensions.ai/details/publication/pub.1019732688
38 https://doi.org/10.1134/1.1511788
39 schema:sdDatePublished 2022-05-20T07:22
40 schema:sdLicense https://scigraph.springernature.com/explorer/license/
41 schema:sdPublisher Ndd28a25407fa4adc8632d7e5be823b53
42 schema:url https://doi.org/10.1134/1.1511788
43 sgo:license sg:explorer/license/
44 sgo:sdDataset articles
45 rdf:type schema:ScholarlyArticle
46 N02622381597c422b8216a0c062470bd8 rdf:first sg:person.011264364575.18
47 rdf:rest N29390f40756341fc92fc270a7ceac728
48 N03e359014bb9440da3a60051d04dbf6d schema:issueNumber 9
49 rdf:type schema:PublicationIssue
50 N129d906f7ea043bcab9ce3780b1f2bfc rdf:first sg:person.013204575705.73
51 rdf:rest Nabd92ef76d164061a8ead535cbc1809d
52 N29390f40756341fc92fc270a7ceac728 rdf:first sg:person.015012127015.53
53 rdf:rest N129d906f7ea043bcab9ce3780b1f2bfc
54 N31a49958fd304518b56300e0981fba7c rdf:first sg:person.010730376716.55
55 rdf:rest rdf:nil
56 N3aa023437f894198b9070a26d65f3e04 schema:name doi
57 schema:value 10.1134/1.1511788
58 rdf:type schema:PropertyValue
59 N4d1873f854c042929bfbddf290e96f31 schema:affiliation grid-institutes:grid.423485.c
60 schema:familyName Savkina
61 schema:givenName N. S.
62 rdf:type schema:Person
63 N7e81ca6c445b46b6b002363cebddaa86 rdf:first sg:person.012436124105.42
64 rdf:rest N31a49958fd304518b56300e0981fba7c
65 Na172156933cd4130b86351d755fdc9a2 schema:name dimensions_id
66 schema:value pub.1019732688
67 rdf:type schema:PropertyValue
68 Na4be8f8221f54fbf8a01cdd0d20792ac schema:volumeNumber 28
69 rdf:type schema:PublicationVolume
70 Nabd92ef76d164061a8ead535cbc1809d rdf:first N4d1873f854c042929bfbddf290e96f31
71 rdf:rest N7e81ca6c445b46b6b002363cebddaa86
72 Ndd28a25407fa4adc8632d7e5be823b53 schema:name Springer Nature - SN SciGraph project
73 rdf:type schema:Organization
74 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
75 schema:name Physical Sciences
76 rdf:type schema:DefinedTerm
77 sg:journal.1136630 schema:issn 0320-0116
78 0360-120X
79 schema:name Technical Physics Letters
80 schema:publisher Pleiades Publishing
81 rdf:type schema:Periodical
82 sg:person.010730376716.55 schema:affiliation grid-institutes:grid.423485.c
83 schema:familyName Sorokin
84 schema:givenName L. M.
85 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010730376716.55
86 rdf:type schema:Person
87 sg:person.011264364575.18 schema:affiliation grid-institutes:grid.423485.c
88 schema:familyName Lebedev
89 schema:givenName A. A.
90 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18
91 rdf:type schema:Person
92 sg:person.012436124105.42 schema:affiliation grid-institutes:grid.423485.c
93 schema:familyName Kuznetsov
94 schema:givenName A. N.
95 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012436124105.42
96 rdf:type schema:Person
97 sg:person.013204575705.73 schema:affiliation grid-institutes:grid.423485.c
98 schema:familyName Davydov
99 schema:givenName D. V.
100 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013204575705.73
101 rdf:type schema:Person
102 sg:person.015012127015.53 schema:affiliation grid-institutes:grid.423485.c
103 schema:familyName Strel’chuk
104 schema:givenName A. M.
105 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015012127015.53
106 rdf:type schema:Person
107 grid-institutes:grid.423485.c schema:alternateName Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
108 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
109 rdf:type schema:Organization
 




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