Experimental observation of splitting of the light and heavy hole bands in elastically strained GaAsN View Full Text


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Article Info

DATE

2002-09

AUTHORS

A. Yu. Egorov, E. S. Semenova, V. M. Ustinov, Y. G. Hong, C. Tu

ABSTRACT

Twin peak photoluminescence of a GaAsN solid solution grown on GaAs substrate has been observed at room temperature. The peak splitting increases with an increase in the nitrogen content of the ternary compound. The observed form of the spectra is attributed to the presence of two transitions involving light and heavy holes. The splitting of light-and heavy-hole levels is due to elastic strain in GaAsN layers grown on the GaAs surface. More... »

PAGES

981-984

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1507277

DOI

http://dx.doi.org/10.1134/1.1507277

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1043221350


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