Ontology type: schema:ScholarlyArticle
2002-09
AUTHORSA. Yu. Egorov, E. S. Semenova, V. M. Ustinov, Y. G. Hong, C. Tu
ABSTRACTTwin peak photoluminescence of a GaAsN solid solution grown on GaAs substrate has been observed at room temperature. The peak splitting increases with an increase in the nitrogen content of the ternary compound. The observed form of the spectra is attributed to the presence of two transitions involving light and heavy holes. The splitting of light-and heavy-hole levels is due to elastic strain in GaAsN layers grown on the GaAs surface. More... »
PAGES981-984
http://scigraph.springernature.com/pub.10.1134/1.1507277
DOIhttp://dx.doi.org/10.1134/1.1507277
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