Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2002-09

AUTHORS

M. D. Vilisova, A. E. Kunitsyn, L. G. Lavrent’eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. E. Toropov, V. V. Chaldyshev

ABSTRACT

Using the methods of X-ray diffraction, optical absorption in the near-infrared range, and the Hall effect, the influence of growth conditions on the structure and properties of Si-doped GaAs layers grown by low-temperature molecular-beam epitaxy was investigated. The relation between the incorporation of excess As and electrical properties of the layers is analyzed. More... »

PAGES

953-957

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1507270

DOI

http://dx.doi.org/10.1134/1.1507270

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1022979925


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