Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2002-09

AUTHORS

M. D. Vilisova, A. E. Kunitsyn, L. G. Lavrent’eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. E. Toropov, V. V. Chaldyshev

ABSTRACT

Using the methods of X-ray diffraction, optical absorption in the near-infrared range, and the Hall effect, the influence of growth conditions on the structure and properties of Si-doped GaAs layers grown by low-temperature molecular-beam epitaxy was investigated. The relation between the incorporation of excess As and electrical properties of the layers is analyzed. More... »

PAGES

953-957

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1507270

DOI

http://dx.doi.org/10.1134/1.1507270

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1022979925


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Tomsk State University", 
          "id": "https://www.grid.ac/institutes/grid.77602.34", 
          "name": [
            "Siberian Physicotechnical Institute, Tomsk State University, pr. Lenina 36, 634050, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vilisova", 
        "givenName": "M. D.", 
        "id": "sg:person.016422411027.34", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016422411027.34"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kunitsyn", 
        "givenName": "A. E.", 
        "id": "sg:person.011601422063.09", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011601422063.09"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Tomsk State University", 
          "id": "https://www.grid.ac/institutes/grid.77602.34", 
          "name": [
            "Tomsk State University, pr. Lenina 36, 634050, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lavrent\u2019eva", 
        "givenName": "L. G.", 
        "id": "sg:person.012371726733.00", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012371726733.00"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent\u2019eva 13, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Preobrazhenskii", 
        "givenName": "V. V.", 
        "id": "sg:person.010664106542.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010664106542.73"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent\u2019eva 13, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Putyato", 
        "givenName": "M. A.", 
        "id": "sg:person.014730523656.90", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014730523656.90"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent\u2019eva 13, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Semyagin", 
        "givenName": "B. R.", 
        "id": "sg:person.011644303155.87", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011644303155.87"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Tomsk State University", 
          "id": "https://www.grid.ac/institutes/grid.77602.34", 
          "name": [
            "Tomsk State University, pr. Lenina 36, 634050, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Toropov", 
        "givenName": "S. E.", 
        "id": "sg:person.010415774056.39", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010415774056.39"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Chaldyshev", 
        "givenName": "V. V.", 
        "id": "sg:person.010716755351.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010716755351.29"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/0921-4526(95)00376-k", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1014786102"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0039-6028(00)00435-0", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1030621399"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.101229", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057648813"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.112490", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057660043"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.114782", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057676124"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1330765", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057695607"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.351200", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057965334"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.351538", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057965909"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.356099", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057974722"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.356566", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057975838"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.366723", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057995731"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.370984", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058005392"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.373549", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058007923"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.87.045504", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060823460"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.87.045504", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060823460"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2002-09", 
    "datePublishedReg": "2002-09-01", 
    "description": "Using the methods of X-ray diffraction, optical absorption in the near-infrared range, and the Hall effect, the influence of growth conditions on the structure and properties of Si-doped GaAs layers grown by low-temperature molecular-beam epitaxy was investigated. The relation between the incorporation of excess As and electrical properties of the layers is analyzed.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/1.1507270", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "9", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "36"
      }
    ], 
    "name": "Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy", 
    "pagination": "953-957", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "6d7b724c10fd91915b22cb37fae53183fa37de9e07e3959bc108c50ecc3685c8"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1507270"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1022979925"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1507270", 
      "https://app.dimensions.ai/details/publication/pub.1022979925"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T22:29", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8690_00000499.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134/1.1507270"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

159 TRIPLES      21 PREDICATES      41 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1507270 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nca7f31d473e5491d9a264d720dceac2b
4 schema:citation https://doi.org/10.1016/0921-4526(95)00376-k
5 https://doi.org/10.1016/s0039-6028(00)00435-0
6 https://doi.org/10.1063/1.101229
7 https://doi.org/10.1063/1.112490
8 https://doi.org/10.1063/1.114782
9 https://doi.org/10.1063/1.1330765
10 https://doi.org/10.1063/1.351200
11 https://doi.org/10.1063/1.351538
12 https://doi.org/10.1063/1.356099
13 https://doi.org/10.1063/1.356566
14 https://doi.org/10.1063/1.366723
15 https://doi.org/10.1063/1.370984
16 https://doi.org/10.1063/1.373549
17 https://doi.org/10.1103/physrevlett.87.045504
18 schema:datePublished 2002-09
19 schema:datePublishedReg 2002-09-01
20 schema:description Using the methods of X-ray diffraction, optical absorption in the near-infrared range, and the Hall effect, the influence of growth conditions on the structure and properties of Si-doped GaAs layers grown by low-temperature molecular-beam epitaxy was investigated. The relation between the incorporation of excess As and electrical properties of the layers is analyzed.
21 schema:genre research_article
22 schema:inLanguage en
23 schema:isAccessibleForFree false
24 schema:isPartOf N9ed15fe3f889433b93ac8df2c6ea7744
25 Nc8c05c30ef474d038b7e48bdbb62c548
26 sg:journal.1136692
27 schema:name Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy
28 schema:pagination 953-957
29 schema:productId N61ba76c5d33a47b5af5668c55de7fd4e
30 Nd271ee3c3f68475397f88da6281fced7
31 Ne29a3f063d85483ea1702e32fbbd7509
32 schema:sameAs https://app.dimensions.ai/details/publication/pub.1022979925
33 https://doi.org/10.1134/1.1507270
34 schema:sdDatePublished 2019-04-10T22:29
35 schema:sdLicense https://scigraph.springernature.com/explorer/license/
36 schema:sdPublisher Neddf359d43ab4f4fa43bcfa589cf71fa
37 schema:url http://link.springer.com/10.1134/1.1507270
38 sgo:license sg:explorer/license/
39 sgo:sdDataset articles
40 rdf:type schema:ScholarlyArticle
41 N213168e4ce1d4af7898c9171c6a0e7d6 rdf:first sg:person.012371726733.00
42 rdf:rest N867108a11b03499e8bbb7086c496fdfb
43 N61ba76c5d33a47b5af5668c55de7fd4e schema:name readcube_id
44 schema:value 6d7b724c10fd91915b22cb37fae53183fa37de9e07e3959bc108c50ecc3685c8
45 rdf:type schema:PropertyValue
46 N6bda5db034c44954bc09566cbfa1d0cf rdf:first sg:person.014730523656.90
47 rdf:rest Nd02915c2ad4a42949d1f2e06b4c91e21
48 N84e37b8e61da45a4b0cf21004f3e058f rdf:first sg:person.011601422063.09
49 rdf:rest N213168e4ce1d4af7898c9171c6a0e7d6
50 N867108a11b03499e8bbb7086c496fdfb rdf:first sg:person.010664106542.73
51 rdf:rest N6bda5db034c44954bc09566cbfa1d0cf
52 N9ed15fe3f889433b93ac8df2c6ea7744 schema:volumeNumber 36
53 rdf:type schema:PublicationVolume
54 Nc8c05c30ef474d038b7e48bdbb62c548 schema:issueNumber 9
55 rdf:type schema:PublicationIssue
56 Nc96aa1c3524a4b869f21f7657d860500 rdf:first sg:person.010415774056.39
57 rdf:rest Nee6c886d94e5409ba0a2c1f260f3fc12
58 Nca7f31d473e5491d9a264d720dceac2b rdf:first sg:person.016422411027.34
59 rdf:rest N84e37b8e61da45a4b0cf21004f3e058f
60 Nd02915c2ad4a42949d1f2e06b4c91e21 rdf:first sg:person.011644303155.87
61 rdf:rest Nc96aa1c3524a4b869f21f7657d860500
62 Nd271ee3c3f68475397f88da6281fced7 schema:name dimensions_id
63 schema:value pub.1022979925
64 rdf:type schema:PropertyValue
65 Ne29a3f063d85483ea1702e32fbbd7509 schema:name doi
66 schema:value 10.1134/1.1507270
67 rdf:type schema:PropertyValue
68 Neddf359d43ab4f4fa43bcfa589cf71fa schema:name Springer Nature - SN SciGraph project
69 rdf:type schema:Organization
70 Nee6c886d94e5409ba0a2c1f260f3fc12 rdf:first sg:person.010716755351.29
71 rdf:rest rdf:nil
72 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
73 schema:name Engineering
74 rdf:type schema:DefinedTerm
75 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
76 schema:name Materials Engineering
77 rdf:type schema:DefinedTerm
78 sg:journal.1136692 schema:issn 1063-7826
79 1090-6479
80 schema:name Semiconductors
81 rdf:type schema:Periodical
82 sg:person.010415774056.39 schema:affiliation https://www.grid.ac/institutes/grid.77602.34
83 schema:familyName Toropov
84 schema:givenName S. E.
85 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010415774056.39
86 rdf:type schema:Person
87 sg:person.010664106542.73 schema:affiliation https://www.grid.ac/institutes/grid.450314.7
88 schema:familyName Preobrazhenskii
89 schema:givenName V. V.
90 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010664106542.73
91 rdf:type schema:Person
92 sg:person.010716755351.29 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
93 schema:familyName Chaldyshev
94 schema:givenName V. V.
95 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010716755351.29
96 rdf:type schema:Person
97 sg:person.011601422063.09 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
98 schema:familyName Kunitsyn
99 schema:givenName A. E.
100 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011601422063.09
101 rdf:type schema:Person
102 sg:person.011644303155.87 schema:affiliation https://www.grid.ac/institutes/grid.450314.7
103 schema:familyName Semyagin
104 schema:givenName B. R.
105 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011644303155.87
106 rdf:type schema:Person
107 sg:person.012371726733.00 schema:affiliation https://www.grid.ac/institutes/grid.77602.34
108 schema:familyName Lavrent’eva
109 schema:givenName L. G.
110 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012371726733.00
111 rdf:type schema:Person
112 sg:person.014730523656.90 schema:affiliation https://www.grid.ac/institutes/grid.450314.7
113 schema:familyName Putyato
114 schema:givenName M. A.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014730523656.90
116 rdf:type schema:Person
117 sg:person.016422411027.34 schema:affiliation https://www.grid.ac/institutes/grid.77602.34
118 schema:familyName Vilisova
119 schema:givenName M. D.
120 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016422411027.34
121 rdf:type schema:Person
122 https://doi.org/10.1016/0921-4526(95)00376-k schema:sameAs https://app.dimensions.ai/details/publication/pub.1014786102
123 rdf:type schema:CreativeWork
124 https://doi.org/10.1016/s0039-6028(00)00435-0 schema:sameAs https://app.dimensions.ai/details/publication/pub.1030621399
125 rdf:type schema:CreativeWork
126 https://doi.org/10.1063/1.101229 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057648813
127 rdf:type schema:CreativeWork
128 https://doi.org/10.1063/1.112490 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057660043
129 rdf:type schema:CreativeWork
130 https://doi.org/10.1063/1.114782 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057676124
131 rdf:type schema:CreativeWork
132 https://doi.org/10.1063/1.1330765 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057695607
133 rdf:type schema:CreativeWork
134 https://doi.org/10.1063/1.351200 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057965334
135 rdf:type schema:CreativeWork
136 https://doi.org/10.1063/1.351538 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057965909
137 rdf:type schema:CreativeWork
138 https://doi.org/10.1063/1.356099 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057974722
139 rdf:type schema:CreativeWork
140 https://doi.org/10.1063/1.356566 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057975838
141 rdf:type schema:CreativeWork
142 https://doi.org/10.1063/1.366723 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057995731
143 rdf:type schema:CreativeWork
144 https://doi.org/10.1063/1.370984 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058005392
145 rdf:type schema:CreativeWork
146 https://doi.org/10.1063/1.373549 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058007923
147 rdf:type schema:CreativeWork
148 https://doi.org/10.1103/physrevlett.87.045504 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060823460
149 rdf:type schema:CreativeWork
150 https://www.grid.ac/institutes/grid.423485.c schema:alternateName Ioffe Institute
151 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
152 rdf:type schema:Organization
153 https://www.grid.ac/institutes/grid.450314.7 schema:alternateName Institute of Semiconductor Physics
154 schema:name Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, 630090, Novosibirsk, Russia
155 rdf:type schema:Organization
156 https://www.grid.ac/institutes/grid.77602.34 schema:alternateName Tomsk State University
157 schema:name Siberian Physicotechnical Institute, Tomsk State University, pr. Lenina 36, 634050, Tomsk, Russia
158 Tomsk State University, pr. Lenina 36, 634050, Tomsk, Russia
159 rdf:type schema:Organization
 




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