Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2002-08

AUTHORS

V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

ABSTRACT

Phase diagrams of GaAs (001) surface structures were used to calibrate sensors of the substrate temperature and As flux in molecular-beam epitaxy systems. The sublimation temperature of amorphous layers of As adsorbed on GaAs was measured. It was shown that this temperature is constant and does not depend on the rate of substrate heating, layer thickness, or the degree of vacuum in the system. The sublimation temperature of amorphous As can be used as a reference point to calibrate the substrate temperature in the range of low growth temperatures. More... »

PAGES

837-840

Journal

TITLE

Semiconductors

ISSUE

8

VOLUME

36

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1500455

DOI

http://dx.doi.org/10.1134/1.1500455

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1035165458


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent\u2019eva 13, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Preobrazhenskii", 
        "givenName": "V. V.", 
        "id": "sg:person.010664106542.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010664106542.73"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent\u2019eva 13, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Putyato", 
        "givenName": "M. A.", 
        "id": "sg:person.014730523656.90", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014730523656.90"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent\u2019eva 13, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Semyagin", 
        "givenName": "B. R.", 
        "id": "sg:person.011644303155.87", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011644303155.87"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/0022-0248(78)90168-9", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1009731177"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-0248(78)90168-9", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1009731177"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-0248(92)90120-8", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1023593300"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-0248(92)90120-8", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1023593300"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0022-0248(98)01323-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1029897272"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0022-0248(98)01308-6", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1040483231"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1049/el:19840033", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056768507"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.97824", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058137930"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.582516", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062192563"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.583377", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062193424"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.584351", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062194398"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2002-08", 
    "datePublishedReg": "2002-08-01", 
    "description": "Phase diagrams of GaAs (001) surface structures were used to calibrate sensors of the substrate temperature and As flux in molecular-beam epitaxy systems. The sublimation temperature of amorphous layers of As adsorbed on GaAs was measured. It was shown that this temperature is constant and does not depend on the rate of substrate heating, layer thickness, or the degree of vacuum in the system. The sublimation temperature of amorphous As can be used as a reference point to calibrate the substrate temperature in the range of low growth temperatures.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/1.1500455", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "8", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "36"
      }
    ], 
    "name": "Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs", 
    "pagination": "837-840", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "a783b372382771ef954a43e9296c5c25bdda0ff29f9b69d7b7195a84bd5e9973"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1500455"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1035165458"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1500455", 
      "https://app.dimensions.ai/details/publication/pub.1035165458"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T12:53", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000364_0000000364/records_72856_00000000.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134/1.1500455"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

102 TRIPLES      21 PREDICATES      36 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1500455 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nc2842077d1a44ac79c5ecf0fc6c5576f
4 schema:citation https://doi.org/10.1016/0022-0248(78)90168-9
5 https://doi.org/10.1016/0022-0248(92)90120-8
6 https://doi.org/10.1016/s0022-0248(98)01308-6
7 https://doi.org/10.1016/s0022-0248(98)01323-2
8 https://doi.org/10.1049/el:19840033
9 https://doi.org/10.1063/1.97824
10 https://doi.org/10.1116/1.582516
11 https://doi.org/10.1116/1.583377
12 https://doi.org/10.1116/1.584351
13 schema:datePublished 2002-08
14 schema:datePublishedReg 2002-08-01
15 schema:description Phase diagrams of GaAs (001) surface structures were used to calibrate sensors of the substrate temperature and As flux in molecular-beam epitaxy systems. The sublimation temperature of amorphous layers of As adsorbed on GaAs was measured. It was shown that this temperature is constant and does not depend on the rate of substrate heating, layer thickness, or the degree of vacuum in the system. The sublimation temperature of amorphous As can be used as a reference point to calibrate the substrate temperature in the range of low growth temperatures.
16 schema:genre research_article
17 schema:inLanguage en
18 schema:isAccessibleForFree false
19 schema:isPartOf N6a270845ffb2415a9e0f40af3415dea6
20 Ne949cc2f535a4d07b8222f371688b077
21 sg:journal.1136692
22 schema:name Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs
23 schema:pagination 837-840
24 schema:productId N3d37499beefc4d7580c9ac71ba073cfa
25 N6c404fd7c73645139bf042f5bcd0da0c
26 Nfc7c849317b34978892c701defdb1066
27 schema:sameAs https://app.dimensions.ai/details/publication/pub.1035165458
28 https://doi.org/10.1134/1.1500455
29 schema:sdDatePublished 2019-04-11T12:53
30 schema:sdLicense https://scigraph.springernature.com/explorer/license/
31 schema:sdPublisher Ne89f786ece7e45d9963d89f9e847d4ca
32 schema:url http://link.springer.com/10.1134/1.1500455
33 sgo:license sg:explorer/license/
34 sgo:sdDataset articles
35 rdf:type schema:ScholarlyArticle
36 N0a4be1ae812d46498048eb5887e1d445 rdf:first sg:person.011644303155.87
37 rdf:rest rdf:nil
38 N3d37499beefc4d7580c9ac71ba073cfa schema:name dimensions_id
39 schema:value pub.1035165458
40 rdf:type schema:PropertyValue
41 N656cb7045f974955bcc3f3ae71f379c4 rdf:first sg:person.014730523656.90
42 rdf:rest N0a4be1ae812d46498048eb5887e1d445
43 N6a270845ffb2415a9e0f40af3415dea6 schema:issueNumber 8
44 rdf:type schema:PublicationIssue
45 N6c404fd7c73645139bf042f5bcd0da0c schema:name doi
46 schema:value 10.1134/1.1500455
47 rdf:type schema:PropertyValue
48 Nc2842077d1a44ac79c5ecf0fc6c5576f rdf:first sg:person.010664106542.73
49 rdf:rest N656cb7045f974955bcc3f3ae71f379c4
50 Ne89f786ece7e45d9963d89f9e847d4ca schema:name Springer Nature - SN SciGraph project
51 rdf:type schema:Organization
52 Ne949cc2f535a4d07b8222f371688b077 schema:volumeNumber 36
53 rdf:type schema:PublicationVolume
54 Nfc7c849317b34978892c701defdb1066 schema:name readcube_id
55 schema:value a783b372382771ef954a43e9296c5c25bdda0ff29f9b69d7b7195a84bd5e9973
56 rdf:type schema:PropertyValue
57 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
58 schema:name Engineering
59 rdf:type schema:DefinedTerm
60 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
61 schema:name Materials Engineering
62 rdf:type schema:DefinedTerm
63 sg:journal.1136692 schema:issn 1063-7826
64 1090-6479
65 schema:name Semiconductors
66 rdf:type schema:Periodical
67 sg:person.010664106542.73 schema:affiliation https://www.grid.ac/institutes/grid.450314.7
68 schema:familyName Preobrazhenskii
69 schema:givenName V. V.
70 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010664106542.73
71 rdf:type schema:Person
72 sg:person.011644303155.87 schema:affiliation https://www.grid.ac/institutes/grid.450314.7
73 schema:familyName Semyagin
74 schema:givenName B. R.
75 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011644303155.87
76 rdf:type schema:Person
77 sg:person.014730523656.90 schema:affiliation https://www.grid.ac/institutes/grid.450314.7
78 schema:familyName Putyato
79 schema:givenName M. A.
80 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014730523656.90
81 rdf:type schema:Person
82 https://doi.org/10.1016/0022-0248(78)90168-9 schema:sameAs https://app.dimensions.ai/details/publication/pub.1009731177
83 rdf:type schema:CreativeWork
84 https://doi.org/10.1016/0022-0248(92)90120-8 schema:sameAs https://app.dimensions.ai/details/publication/pub.1023593300
85 rdf:type schema:CreativeWork
86 https://doi.org/10.1016/s0022-0248(98)01308-6 schema:sameAs https://app.dimensions.ai/details/publication/pub.1040483231
87 rdf:type schema:CreativeWork
88 https://doi.org/10.1016/s0022-0248(98)01323-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1029897272
89 rdf:type schema:CreativeWork
90 https://doi.org/10.1049/el:19840033 schema:sameAs https://app.dimensions.ai/details/publication/pub.1056768507
91 rdf:type schema:CreativeWork
92 https://doi.org/10.1063/1.97824 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058137930
93 rdf:type schema:CreativeWork
94 https://doi.org/10.1116/1.582516 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062192563
95 rdf:type schema:CreativeWork
96 https://doi.org/10.1116/1.583377 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062193424
97 rdf:type schema:CreativeWork
98 https://doi.org/10.1116/1.584351 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062194398
99 rdf:type schema:CreativeWork
100 https://www.grid.ac/institutes/grid.450314.7 schema:alternateName Institute of Semiconductor Physics
101 schema:name Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, 630090, Novosibirsk, Russia
102 rdf:type schema:Organization
 




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