On the possibility of creating a superfast-recovery silicon carbide diode View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2002-07

AUTHORS

I. V. Grekhov, P. A. Ivanov, A. O. Konstantinov, T. P. Samsonova

ABSTRACT

The possibility of a superfast (<1 ns) termination of the reverse current during the recovery of a 4H-SiC diode with a p+p0n+ structure is experimentally demonstrated for the first time. It is shown that the gate recovery process is much like that taking place in inverse-recovery silicon diodes.

PAGES

544-546

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1498779

DOI

http://dx.doi.org/10.1134/1.1498779

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1021602209


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