Molecular beam epitaxy of (Al)GaAsN using ammonia as a source of nitrogen View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2002-06

AUTHORS

V. A. Odnoblyudov, A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov

ABSTRACT

The possibility of using ammonia as a source of nitrogen for the molecular beam epitaxy (MBE) of AlGaAsN/GaAs layers was studied. It is shown that nitrogen is not incorporated into the GaAs layers in a broad range of the MBE conditions studied. The incorporation of nitrogen is possible in the presence of aluminum in the growing film. The molar fraction of nitrogen in the growing material is equal to that of aluminum, provided that the supply rate of ammonium is sufficiently high. Theoretical estimates are confirmed by the experimental data. More... »

PAGES

517-520

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1490977

DOI

http://dx.doi.org/10.1134/1.1490977

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1041277125


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Odnoblyudov", 
        "givenName": "V. A.", 
        "id": "sg:person.012477012745.34", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012477012745.34"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kovsh", 
        "givenName": "A. R.", 
        "id": "sg:person.015242115543.03", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015242115543.03"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhukov", 
        "givenName": "A. E.", 
        "id": "sg:person.011315427765.17", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011315427765.17"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Egorov", 
        "givenName": "A. Yu.", 
        "id": "sg:person.015162132277.09", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015162132277.09"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Maleev", 
        "givenName": "N. A.", 
        "id": "sg:person.011317077151.34", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011317077151.34"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mikhrin", 
        "givenName": "S. S.", 
        "id": "sg:person.011622563643.98", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011622563643.98"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ustinov", 
        "givenName": "V. M.", 
        "id": "sg:person.010616411412.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010616411412.30"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2002-06", 
    "datePublishedReg": "2002-06-01", 
    "description": "The possibility of using ammonia as a source of nitrogen for the molecular beam epitaxy (MBE) of AlGaAsN/GaAs layers was studied. It is shown that nitrogen is not incorporated into the GaAs layers in a broad range of the MBE conditions studied. The incorporation of nitrogen is possible in the presence of aluminum in the growing film. The molar fraction of nitrogen in the growing material is equal to that of aluminum, provided that the supply rate of ammonium is sufficiently high. Theoretical estimates are confirmed by the experimental data.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/1.1490977", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "0320-0116", 
          "0360-120X"
        ], 
        "name": "Technical Physics Letters", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "6", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "28"
      }
    ], 
    "keywords": [
      "incorporation of nitrogen", 
      "presence of aluminum", 
      "source of nitrogen", 
      "molar fraction", 
      "molecular beam", 
      "molecular beam epitaxy", 
      "nitrogen", 
      "ammonia", 
      "aluminum", 
      "beam epitaxy", 
      "layer", 
      "films", 
      "broad range", 
      "experimental data", 
      "GaAs layers", 
      "ammonium", 
      "materials", 
      "incorporation", 
      "theoretical estimates", 
      "epitaxy", 
      "range", 
      "presence", 
      "source", 
      "fraction", 
      "MBE conditions", 
      "conditions", 
      "supply rate", 
      "possibility", 
      "rate", 
      "beam", 
      "data", 
      "estimates", 
      "AlGaAsN/GaAs layers"
    ], 
    "name": "Molecular beam epitaxy of (Al)GaAsN using ammonia as a source of nitrogen", 
    "pagination": "517-520", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1041277125"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1490977"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1490977", 
      "https://app.dimensions.ai/details/publication/pub.1041277125"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-01-01T18:12", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220101/entities/gbq_results/article/article_355.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/1.1490977"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/1.1490977'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/1.1490977'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/1.1490977'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/1.1490977'


 

This table displays all metadata directly associated to this object as RDF triples.

129 TRIPLES      21 PREDICATES      58 URIs      51 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1490977 schema:about anzsrc-for:02
2 schema:author N21208866a7ff41cfab2bd21e4cddbd82
3 schema:datePublished 2002-06
4 schema:datePublishedReg 2002-06-01
5 schema:description The possibility of using ammonia as a source of nitrogen for the molecular beam epitaxy (MBE) of AlGaAsN/GaAs layers was studied. It is shown that nitrogen is not incorporated into the GaAs layers in a broad range of the MBE conditions studied. The incorporation of nitrogen is possible in the presence of aluminum in the growing film. The molar fraction of nitrogen in the growing material is equal to that of aluminum, provided that the supply rate of ammonium is sufficiently high. Theoretical estimates are confirmed by the experimental data.
6 schema:genre article
7 schema:inLanguage en
8 schema:isAccessibleForFree false
9 schema:isPartOf N110a9805869a41dbb220bef643db6d62
10 N624bc730525c488992a8ca6740179382
11 sg:journal.1136630
12 schema:keywords AlGaAsN/GaAs layers
13 GaAs layers
14 MBE conditions
15 aluminum
16 ammonia
17 ammonium
18 beam
19 beam epitaxy
20 broad range
21 conditions
22 data
23 epitaxy
24 estimates
25 experimental data
26 films
27 fraction
28 incorporation
29 incorporation of nitrogen
30 layer
31 materials
32 molar fraction
33 molecular beam
34 molecular beam epitaxy
35 nitrogen
36 possibility
37 presence
38 presence of aluminum
39 range
40 rate
41 source
42 source of nitrogen
43 supply rate
44 theoretical estimates
45 schema:name Molecular beam epitaxy of (Al)GaAsN using ammonia as a source of nitrogen
46 schema:pagination 517-520
47 schema:productId N87ade365ecba415391631c6c5a547ae7
48 Na0da6bec1471496b849d7ac21b7a0599
49 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041277125
50 https://doi.org/10.1134/1.1490977
51 schema:sdDatePublished 2022-01-01T18:12
52 schema:sdLicense https://scigraph.springernature.com/explorer/license/
53 schema:sdPublisher N22bb3586e05a4c7683fc14566e6dc2ec
54 schema:url https://doi.org/10.1134/1.1490977
55 sgo:license sg:explorer/license/
56 sgo:sdDataset articles
57 rdf:type schema:ScholarlyArticle
58 N0c468a35a8b8427b98c6aacf83e00547 rdf:first sg:person.011317077151.34
59 rdf:rest Ndde5a33955384668b7e8b1e691595d45
60 N110a9805869a41dbb220bef643db6d62 schema:issueNumber 6
61 rdf:type schema:PublicationIssue
62 N1c41ef1a5ede4ee6a75b7c76f6efe5bd rdf:first sg:person.010616411412.30
63 rdf:rest rdf:nil
64 N21208866a7ff41cfab2bd21e4cddbd82 rdf:first sg:person.012477012745.34
65 rdf:rest N76b2a1ea8b2440febe216a0a3832e66f
66 N22bb3586e05a4c7683fc14566e6dc2ec schema:name Springer Nature - SN SciGraph project
67 rdf:type schema:Organization
68 N58bc8d73736a48d29c9bbda212eaf66a rdf:first sg:person.011315427765.17
69 rdf:rest Ne630f0f56de546048ea0fe48caee663c
70 N624bc730525c488992a8ca6740179382 schema:volumeNumber 28
71 rdf:type schema:PublicationVolume
72 N76b2a1ea8b2440febe216a0a3832e66f rdf:first sg:person.015242115543.03
73 rdf:rest N58bc8d73736a48d29c9bbda212eaf66a
74 N87ade365ecba415391631c6c5a547ae7 schema:name dimensions_id
75 schema:value pub.1041277125
76 rdf:type schema:PropertyValue
77 Na0da6bec1471496b849d7ac21b7a0599 schema:name doi
78 schema:value 10.1134/1.1490977
79 rdf:type schema:PropertyValue
80 Ndde5a33955384668b7e8b1e691595d45 rdf:first sg:person.011622563643.98
81 rdf:rest N1c41ef1a5ede4ee6a75b7c76f6efe5bd
82 Ne630f0f56de546048ea0fe48caee663c rdf:first sg:person.015162132277.09
83 rdf:rest N0c468a35a8b8427b98c6aacf83e00547
84 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
85 schema:name Physical Sciences
86 rdf:type schema:DefinedTerm
87 sg:journal.1136630 schema:issn 0320-0116
88 0360-120X
89 schema:name Technical Physics Letters
90 schema:publisher Pleiades Publishing
91 rdf:type schema:Periodical
92 sg:person.010616411412.30 schema:affiliation grid-institutes:grid.423485.c
93 schema:familyName Ustinov
94 schema:givenName V. M.
95 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010616411412.30
96 rdf:type schema:Person
97 sg:person.011315427765.17 schema:affiliation grid-institutes:grid.423485.c
98 schema:familyName Zhukov
99 schema:givenName A. E.
100 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011315427765.17
101 rdf:type schema:Person
102 sg:person.011317077151.34 schema:affiliation grid-institutes:grid.423485.c
103 schema:familyName Maleev
104 schema:givenName N. A.
105 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011317077151.34
106 rdf:type schema:Person
107 sg:person.011622563643.98 schema:affiliation grid-institutes:grid.423485.c
108 schema:familyName Mikhrin
109 schema:givenName S. S.
110 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011622563643.98
111 rdf:type schema:Person
112 sg:person.012477012745.34 schema:affiliation grid-institutes:grid.423485.c
113 schema:familyName Odnoblyudov
114 schema:givenName V. A.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012477012745.34
116 rdf:type schema:Person
117 sg:person.015162132277.09 schema:affiliation grid-institutes:grid.423485.c
118 schema:familyName Egorov
119 schema:givenName A. Yu.
120 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015162132277.09
121 rdf:type schema:Person
122 sg:person.015242115543.03 schema:affiliation grid-institutes:grid.423485.c
123 schema:familyName Kovsh
124 schema:givenName A. R.
125 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015242115543.03
126 rdf:type schema:Person
127 grid-institutes:grid.423485.c schema:alternateName Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
128 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
129 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...