Low-temperature time-resolved photoluminescence in InGaN/GaN quantum wells View Full Text


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Article Info

DATE

2002-06

AUTHORS

A. V. Andrianov, V. Yu. Nekrasov, N. M. Shmidt, E. E. Zavarin, A. S. Usikov, N. N. Zinov’ev, M. N. Tkachuk

ABSTRACT

The results of the investigation of low-temperature time-resolved photoluminescence in undoped and Si-doped In0.2Ga0.8N/GaN structures, which contain 12 quantum wells of width 60 Å separated by barriers of width 60 Å, are reported. The structures were grown by the MOCVD technique on sapphire substrates. The photoluminescence properties observed are explained by the manifestation of two-dimensional donor-acceptor recombination. These properties are the high-energy shift of the peak upon increasing the pumping intensity, a low-energy shift with increasing delay time, and a power law of luminescence decay of the t-γ type. The estimates of the total binding energy for donor and acceptor centers are given. This energy is 340 and 250 meV for Si-doped and undoped quantum wells, respectively. The role of the mosaic structure, which is typical for Group III hexagonal nitrides, is discussed as a factor favorable for the formation of donor-acceptor pairs. More... »

PAGES

641-646

References to SciGraph publications

  • 1998-12. Design and Analysis of InGaN-GaN Modulation Doped Field-Effect Transistors (MODFETs) for Over 60 GHz Operation in JOURNAL OF INFRARED, MILLIMETER, AND TERAHERTZ WAVES
  • 1999. Spectroscopic Studies in InGaN Quantum Wells in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • 1997-02. Defects and Interfaces in GaN Epitaxy in MRS BULLETIN
  • 1995-04. Native defects and dopants in gan studied through photoluminescence and optically detected magnetic resonance in JOURNAL OF ELECTRONIC MATERIALS
  • 1998. The role of piezoelectric fields in GaN-based quantum wells in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • 1997-09. Library in MRS BULLETIN
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/1.1485662

    DOI

    http://dx.doi.org/10.1134/1.1485662

    DIMENSIONS

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