Luminescent Si-Ge solid solution layers ER-doped in molecular-beam epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2002-06

AUTHORS

V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, B. A. Andreev, Z. F. Krasil’nik, B. Ya. Ber, Yu. N. Drozdov, A. N. Yablonsky

ABSTRACT

Erbium-doped Si1−xGex epitaxial layers have been grown by sublimation molecular-beam epitaxy (SMBE) in an atmosphere of germane (GeH4). Doping with erbium was done during growth, with single-crystal Si:Er as the source of Er. The Si-Si1−xGex (0.01≤x≤0.09) interface was studied by secondary-ion mass spectrometry. Er and Ge show concentration profiles with abrupt boundaries and a significant decrease in their surface segregation. This means that hydrogen acts as a “surfactant.” Data on the luminescent properties of the Er-doped Si/Si1−xGex samples are reported. More... »

PAGES

625-628

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1485659

DOI

http://dx.doi.org/10.1134/1.1485659

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1016948125


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