The interrelation of surface relief of porous silicon with specific features of Raman spectra View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2002-05

AUTHORS

B. M. Bulakh, B. R. Jumayev, N. O. Korsunska, O. S. Litvin, T. V. Torchynska, L. Yu. Khomenkova, V. O. Yukhymchuk

ABSTRACT

Structural characteristics and Raman spectra of porous silicon layers were investigated. It was demonstrated that the effect of enhancement of the signal intensity of Raman scattering from porous silicon compared with the signal intensity from the substrate is associated with the presence of micrometer-size pores in the samples. A model making it possible to explain this enhancement, the signal shape, and the coincidence of the signal from the porous layer by the shape and location with the line from the Si substrate is suggested. More... »

PAGES

558-563

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1478548

DOI

http://dx.doi.org/10.1134/1.1478548

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006784318


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