2001-10
AUTHORSA. E. Zhukov, E. S. Semenova, V. M. Ustinov, E. R. Weber
ABSTRACTA new dc plasma source for MBE growth of GaAsN layers is suggested. The efficiency of nitrogen incorporation, crystal perfection, surface morphology, and luminescent properties of the epilayers vs. operation conditions of the source are studied.
PAGES1265-1269
http://scigraph.springernature.com/pub.10.1134/1.1412061
DOIhttp://dx.doi.org/10.1134/1.1412061
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