GaAsN-on-GaAs MBE using a DC plasma source View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2001-10

AUTHORS

A. E. Zhukov, E. S. Semenova, V. M. Ustinov, E. R. Weber

ABSTRACT

A new dc plasma source for MBE growth of GaAsN layers is suggested. The efficiency of nitrogen incorporation, crystal perfection, surface morphology, and luminescent properties of the epilayers vs. operation conditions of the source are studied.

PAGES

1265-1269

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1412061

DOI

http://dx.doi.org/10.1134/1.1412061

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1028457128


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