1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2001-09

AUTHORS

A. E. Zhukov, B. V. Volovik, S. S. Mikhrin, N. A. Maleev, A. F. Tsatsul’nikov, E. V. Nikitina, I. N. Kayander, V. M. Ustinov, N. N. Ledentsov

ABSTRACT

Laser diode structures on GaAs substrates with an active region employing laterally associated InAs quantum dots obtained by low-temperature MBE exhibit electroluminescence at a wavelength of 1.55–1.6 μm in a temperature range from 20 to 260 K.

PAGES

734-736

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1405243

DOI

http://dx.doi.org/10.1134/1.1405243

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1045414530


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