Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence View Full Text


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Article Info

DATE

2001-07

AUTHORS

V. E. Kudryashov, S. S. Mamakin, A. N. Turkin, A. É. Yunovich, A. N. Kovalev, F. I. Manyakhin

ABSTRACT

Luminescence spectra and quantum yield in light emitting diodes (LEDs) based on InGaN/AlGaN/GaN heterostructures with multiple quantum wells (MQWs) were studied in the range of currents J=10−6–10−1 A. Minor spread in the quantum yield at operating currents (±15% at J≈10 mA) was observed in these LEDs, which were fabricated by Hewlett-Packard. The spread is due to differences in the current and voltage dependences of the diode emission intensity, caused by differences in the charged center distribution across the space-charge region (SCR) of the structures and in the role of the tunnel current component at low voltages. In the diodes with a thin (≲120 nm) SCR, a tunnel emission band was observed for J≲100 µA; the peak energy of this band ℏωmax=1.92–2.05 eV corresponds to the voltage applied. At low currents (J=0.05–0.5 mA), the spectral position of the main peak ℏωmax=2.35–2.36 eV is independent of the voltage and is determined by the radiative transitions between the localized states. At J>1 mA, this band shifts with the current (ℏωmax=2.36–2.52 eV). Its shape corresponds to the model for the occupation of states in the two-dimensional energy band tails, which are caused by the microscopic potential fluctuations. The four parameters in this model are related to the calculated energy band diagram of the MQW structure. More... »

PAGES

827-834

References to SciGraph publications

  • 1999. Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
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    http://scigraph.springernature.com/pub.10.1134/1.1385720

    DOI

    http://dx.doi.org/10.1134/1.1385720

    DIMENSIONS

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    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Physical Sciences", 
            "type": "DefinedTerm"
          }, 
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0202", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Atomic, Molecular, Nuclear, Particle and Plasma Physics", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "affiliation": {
              "alternateName": "Faculty of Physics, Moscow State University, 119899, Vorob\u2019evy gory, Moscow, Russia", 
              "id": "http://www.grid.ac/institutes/grid.14476.30", 
              "name": [
                "Faculty of Physics, Moscow State University, 119899, Vorob\u2019evy gory, Moscow, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Kudryashov", 
            "givenName": "V. E.", 
            "id": "sg:person.012305552404.37", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012305552404.37"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Faculty of Physics, Moscow State University, 119899, Vorob\u2019evy gory, Moscow, Russia", 
              "id": "http://www.grid.ac/institutes/grid.14476.30", 
              "name": [
                "Faculty of Physics, Moscow State University, 119899, Vorob\u2019evy gory, Moscow, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Mamakin", 
            "givenName": "S. S.", 
            "id": "sg:person.010725210050.55", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010725210050.55"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Faculty of Physics, Moscow State University, 119899, Vorob\u2019evy gory, Moscow, Russia", 
              "id": "http://www.grid.ac/institutes/grid.14476.30", 
              "name": [
                "Faculty of Physics, Moscow State University, 119899, Vorob\u2019evy gory, Moscow, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Turkin", 
            "givenName": "A. N.", 
            "id": "sg:person.014702004761.30", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014702004761.30"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Faculty of Physics, Moscow State University, 119899, Vorob\u2019evy gory, Moscow, Russia", 
              "id": "http://www.grid.ac/institutes/grid.14476.30", 
              "name": [
                "Faculty of Physics, Moscow State University, 119899, Vorob\u2019evy gory, Moscow, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Yunovich", 
            "givenName": "A. \u00c9.", 
            "id": "sg:person.07761603515.13", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07761603515.13"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Moscow Institute of Steel and Alloys, Leninskii pr. 4, 117936, Moscow, Russia", 
              "id": "http://www.grid.ac/institutes/grid.35043.31", 
              "name": [
                "Moscow Institute of Steel and Alloys, Leninskii pr. 4, 117936, Moscow, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Kovalev", 
            "givenName": "A. N.", 
            "id": "sg:person.011645166346.27", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011645166346.27"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Moscow Institute of Steel and Alloys, Leninskii pr. 4, 117936, Moscow, Russia", 
              "id": "http://www.grid.ac/institutes/grid.35043.31", 
              "name": [
                "Moscow Institute of Steel and Alloys, Leninskii pr. 4, 117936, Moscow, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Manyakhin", 
            "givenName": "F. I.", 
            "id": "sg:person.013240127346.07", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013240127346.07"
            ], 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "sg:pub.10.1557/s1092578300000727", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1045328358", 
              "https://doi.org/10.1557/s1092578300000727"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "datePublished": "2001-07", 
        "datePublishedReg": "2001-07-01", 
        "description": "Luminescence spectra and quantum yield in light emitting diodes (LEDs) based on InGaN/AlGaN/GaN heterostructures with multiple quantum wells (MQWs) were studied in the range of currents J=10\u22126\u201310\u22121 A. Minor spread in the quantum yield at operating currents (\u00b115% at J\u224810 mA) was observed in these LEDs, which were fabricated by Hewlett-Packard. The spread is due to differences in the current and voltage dependences of the diode emission intensity, caused by differences in the charged center distribution across the space-charge region (SCR) of the structures and in the role of the tunnel current component at low voltages. In the diodes with a thin (\u2272120 nm) SCR, a tunnel emission band was observed for J\u2272100 \u00b5A; the peak energy of this band \u210f\u03c9max=1.92\u20132.05 eV corresponds to the voltage applied. At low currents (J=0.05\u20130.5 mA), the spectral position of the main peak \u210f\u03c9max=2.35\u20132.36 eV is independent of the voltage and is determined by the radiative transitions between the localized states. At J>1 mA, this band shifts with the current (\u210f\u03c9max=2.36\u20132.52 eV). Its shape corresponds to the model for the occupation of states in the two-dimensional energy band tails, which are caused by the microscopic potential fluctuations. The four parameters in this model are related to the calculated energy band diagram of the MQW structure.", 
        "genre": "article", 
        "id": "sg:pub.10.1134/1.1385720", 
        "inLanguage": "en", 
        "isAccessibleForFree": false, 
        "isPartOf": [
          {
            "id": "sg:journal.1136692", 
            "issn": [
              "1063-7826", 
              "1090-6479"
            ], 
            "name": "Semiconductors", 
            "publisher": "Pleiades Publishing", 
            "type": "Periodical"
          }, 
          {
            "issueNumber": "7", 
            "type": "PublicationIssue"
          }, 
          {
            "type": "PublicationVolume", 
            "volumeNumber": "35"
          }
        ], 
        "keywords": [
          "space-charge region", 
          "multiple quantum wells", 
          "light emitting diodes", 
          "quantum yield", 
          "luminescence spectra", 
          "InGaN/AlGaN/GaN", 
          "emitting diodes", 
          "AlGaN/GaN", 
          "occupation of states", 
          "heterostructure light emitting diodes", 
          "energy band tails", 
          "efficiency of GaN", 
          "quantum wells", 
          "energy band diagram", 
          "MQW structures", 
          "peak energy", 
          "radiative transitions", 
          "spectral position", 
          "potential fluctuations", 
          "eV corresponds", 
          "band diagram", 
          "tunnel current component", 
          "band tails", 
          "emission intensity", 
          "diodes", 
          "emission band", 
          "GaN", 
          "range of currents", 
          "main peak", 
          "low currents", 
          "spectra", 
          "operating current", 
          "voltage dependence", 
          "low voltage", 
          "voltage", 
          "current", 
          "dependence", 
          "center distribution", 
          "band", 
          "eV", 
          "energy", 
          "state", 
          "wells", 
          "structure", 
          "current components", 
          "transition", 
          "fluctuations", 
          "intensity", 
          "peak", 
          "tail", 
          "diagram", 
          "yield", 
          "corresponds", 
          "shape", 
          "range", 
          "distribution", 
          "region", 
          "parameters", 
          "efficiency", 
          "model", 
          "position", 
          "components", 
          "spread", 
          "Ma", 
          "occupation", 
          "differences", 
          "Hewlett-Packard", 
          "role", 
          "minor spread", 
          "diode emission intensity", 
          "thin (\u2272120 nm) SCR", 
          "tunnel emission band", 
          "two-dimensional energy band tails", 
          "microscopic potential fluctuations", 
          "quantum-well heterostructure light emitting diodes"
        ], 
        "name": "Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence", 
        "pagination": "827-834", 
        "productId": [
          {
            "name": "dimensions_id", 
            "type": "PropertyValue", 
            "value": [
              "pub.1045528578"
            ]
          }, 
          {
            "name": "doi", 
            "type": "PropertyValue", 
            "value": [
              "10.1134/1.1385720"
            ]
          }
        ], 
        "sameAs": [
          "https://doi.org/10.1134/1.1385720", 
          "https://app.dimensions.ai/details/publication/pub.1045528578"
        ], 
        "sdDataset": "articles", 
        "sdDatePublished": "2021-12-01T19:12", 
        "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
        "sdPublisher": {
          "name": "Springer Nature - SN SciGraph project", 
          "type": "Organization"
        }, 
        "sdSource": "s3://com-springernature-scigraph/baseset/20211201/entities/gbq_results/article/article_338.jsonl", 
        "type": "ScholarlyArticle", 
        "url": "https://doi.org/10.1134/1.1385720"
      }
    ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

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    This table displays all metadata directly associated to this object as RDF triples.

    175 TRIPLES      22 PREDICATES      102 URIs      93 LITERALS      6 BLANK NODES

    Subject Predicate Object
    1 sg:pub.10.1134/1.1385720 schema:about anzsrc-for:02
    2 anzsrc-for:0202
    3 schema:author N39bec50a70954bc18d30c7f3682d8fa0
    4 schema:citation sg:pub.10.1557/s1092578300000727
    5 schema:datePublished 2001-07
    6 schema:datePublishedReg 2001-07-01
    7 schema:description Luminescence spectra and quantum yield in light emitting diodes (LEDs) based on InGaN/AlGaN/GaN heterostructures with multiple quantum wells (MQWs) were studied in the range of currents J=10−6–10−1 A. Minor spread in the quantum yield at operating currents (±15% at J≈10 mA) was observed in these LEDs, which were fabricated by Hewlett-Packard. The spread is due to differences in the current and voltage dependences of the diode emission intensity, caused by differences in the charged center distribution across the space-charge region (SCR) of the structures and in the role of the tunnel current component at low voltages. In the diodes with a thin (≲120 nm) SCR, a tunnel emission band was observed for J≲100 µA; the peak energy of this band ℏωmax=1.92–2.05 eV corresponds to the voltage applied. At low currents (J=0.05–0.5 mA), the spectral position of the main peak ℏωmax=2.35–2.36 eV is independent of the voltage and is determined by the radiative transitions between the localized states. At J>1 mA, this band shifts with the current (ℏωmax=2.36–2.52 eV). Its shape corresponds to the model for the occupation of states in the two-dimensional energy band tails, which are caused by the microscopic potential fluctuations. The four parameters in this model are related to the calculated energy band diagram of the MQW structure.
    8 schema:genre article
    9 schema:inLanguage en
    10 schema:isAccessibleForFree false
    11 schema:isPartOf N5bed1d6dc36340afa0949a54bfca12c6
    12 N6c20de29227048828a1582e58cdca8eb
    13 sg:journal.1136692
    14 schema:keywords AlGaN/GaN
    15 GaN
    16 Hewlett-Packard
    17 InGaN/AlGaN/GaN
    18 MQW structures
    19 Ma
    20 band
    21 band diagram
    22 band tails
    23 center distribution
    24 components
    25 corresponds
    26 current
    27 current components
    28 dependence
    29 diagram
    30 differences
    31 diode emission intensity
    32 diodes
    33 distribution
    34 eV
    35 eV corresponds
    36 efficiency
    37 efficiency of GaN
    38 emission band
    39 emission intensity
    40 emitting diodes
    41 energy
    42 energy band diagram
    43 energy band tails
    44 fluctuations
    45 heterostructure light emitting diodes
    46 intensity
    47 light emitting diodes
    48 low currents
    49 low voltage
    50 luminescence spectra
    51 main peak
    52 microscopic potential fluctuations
    53 minor spread
    54 model
    55 multiple quantum wells
    56 occupation
    57 occupation of states
    58 operating current
    59 parameters
    60 peak
    61 peak energy
    62 position
    63 potential fluctuations
    64 quantum wells
    65 quantum yield
    66 quantum-well heterostructure light emitting diodes
    67 radiative transitions
    68 range
    69 range of currents
    70 region
    71 role
    72 shape
    73 space-charge region
    74 spectra
    75 spectral position
    76 spread
    77 state
    78 structure
    79 tail
    80 thin (≲120 nm) SCR
    81 transition
    82 tunnel current component
    83 tunnel emission band
    84 two-dimensional energy band tails
    85 voltage
    86 voltage dependence
    87 wells
    88 yield
    89 schema:name Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence
    90 schema:pagination 827-834
    91 schema:productId N2fb816f172d041c1b257cecd0aecbd23
    92 N9f41a715c8fb4017bffc19c0f246c265
    93 schema:sameAs https://app.dimensions.ai/details/publication/pub.1045528578
    94 https://doi.org/10.1134/1.1385720
    95 schema:sdDatePublished 2021-12-01T19:12
    96 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    97 schema:sdPublisher N722d8ebe73d24e42876b4740fae07166
    98 schema:url https://doi.org/10.1134/1.1385720
    99 sgo:license sg:explorer/license/
    100 sgo:sdDataset articles
    101 rdf:type schema:ScholarlyArticle
    102 N077175e23a3b47ca873f03286efc5e27 rdf:first sg:person.010725210050.55
    103 rdf:rest N1711a502f34948fa953ef174c4f12721
    104 N1711a502f34948fa953ef174c4f12721 rdf:first sg:person.014702004761.30
    105 rdf:rest N303d26e8c4af4c459899d28489850046
    106 N2fb816f172d041c1b257cecd0aecbd23 schema:name dimensions_id
    107 schema:value pub.1045528578
    108 rdf:type schema:PropertyValue
    109 N303d26e8c4af4c459899d28489850046 rdf:first sg:person.07761603515.13
    110 rdf:rest N714221cffcf4464eadfe037934a4c406
    111 N39bec50a70954bc18d30c7f3682d8fa0 rdf:first sg:person.012305552404.37
    112 rdf:rest N077175e23a3b47ca873f03286efc5e27
    113 N3ee3ce9b1d0941feadac5494977d0d3b rdf:first sg:person.013240127346.07
    114 rdf:rest rdf:nil
    115 N5bed1d6dc36340afa0949a54bfca12c6 schema:volumeNumber 35
    116 rdf:type schema:PublicationVolume
    117 N6c20de29227048828a1582e58cdca8eb schema:issueNumber 7
    118 rdf:type schema:PublicationIssue
    119 N714221cffcf4464eadfe037934a4c406 rdf:first sg:person.011645166346.27
    120 rdf:rest N3ee3ce9b1d0941feadac5494977d0d3b
    121 N722d8ebe73d24e42876b4740fae07166 schema:name Springer Nature - SN SciGraph project
    122 rdf:type schema:Organization
    123 N9f41a715c8fb4017bffc19c0f246c265 schema:name doi
    124 schema:value 10.1134/1.1385720
    125 rdf:type schema:PropertyValue
    126 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
    127 schema:name Physical Sciences
    128 rdf:type schema:DefinedTerm
    129 anzsrc-for:0202 schema:inDefinedTermSet anzsrc-for:
    130 schema:name Atomic, Molecular, Nuclear, Particle and Plasma Physics
    131 rdf:type schema:DefinedTerm
    132 sg:journal.1136692 schema:issn 1063-7826
    133 1090-6479
    134 schema:name Semiconductors
    135 schema:publisher Pleiades Publishing
    136 rdf:type schema:Periodical
    137 sg:person.010725210050.55 schema:affiliation grid-institutes:grid.14476.30
    138 schema:familyName Mamakin
    139 schema:givenName S. S.
    140 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010725210050.55
    141 rdf:type schema:Person
    142 sg:person.011645166346.27 schema:affiliation grid-institutes:grid.35043.31
    143 schema:familyName Kovalev
    144 schema:givenName A. N.
    145 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011645166346.27
    146 rdf:type schema:Person
    147 sg:person.012305552404.37 schema:affiliation grid-institutes:grid.14476.30
    148 schema:familyName Kudryashov
    149 schema:givenName V. E.
    150 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012305552404.37
    151 rdf:type schema:Person
    152 sg:person.013240127346.07 schema:affiliation grid-institutes:grid.35043.31
    153 schema:familyName Manyakhin
    154 schema:givenName F. I.
    155 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013240127346.07
    156 rdf:type schema:Person
    157 sg:person.014702004761.30 schema:affiliation grid-institutes:grid.14476.30
    158 schema:familyName Turkin
    159 schema:givenName A. N.
    160 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014702004761.30
    161 rdf:type schema:Person
    162 sg:person.07761603515.13 schema:affiliation grid-institutes:grid.14476.30
    163 schema:familyName Yunovich
    164 schema:givenName A. É.
    165 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07761603515.13
    166 rdf:type schema:Person
    167 sg:pub.10.1557/s1092578300000727 schema:sameAs https://app.dimensions.ai/details/publication/pub.1045328358
    168 https://doi.org/10.1557/s1092578300000727
    169 rdf:type schema:CreativeWork
    170 grid-institutes:grid.14476.30 schema:alternateName Faculty of Physics, Moscow State University, 119899, Vorob’evy gory, Moscow, Russia
    171 schema:name Faculty of Physics, Moscow State University, 119899, Vorob’evy gory, Moscow, Russia
    172 rdf:type schema:Organization
    173 grid-institutes:grid.35043.31 schema:alternateName Moscow Institute of Steel and Alloys, Leninskii pr. 4, 117936, Moscow, Russia
    174 schema:name Moscow Institute of Steel and Alloys, Leninskii pr. 4, 117936, Moscow, Russia
    175 rdf:type schema:Organization
     




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