Structural transformations and silicon nanocrystallite formation in SiOx films View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2001-07

AUTHORS

V. Ya. Bratus’, V. A. Yukhimchuk, L. I. Berezhinsky, M. Ya. Valakh, I. P. Vorona, I. Z. Indutnyi, T. T. Petrenko, P. E. Shepeliavyi, I. B. Yanchuk

ABSTRACT

The results of a comprehensive study by the methods of IR absorption, Raman scattering, photoluminescence (PL), and electron spin resonance (ESR) of SiOx films prepared by thermal evaporation of SiO in a vacuum are presented. The nature of structural transformations occurring on annealing the films is determined. Annealing in the temperature range 300–600°C gives rise to a PL band at 650 nm, presumably related to structural defects in SiOx film. Raising the annealing temperature further leads to healing of such defects and quenching of the PL band. Silicon precipitates pass from the amorphous to the crystalline state on being annealed at Tann=1100°C, which gives rise to a new PL band at 730 nm. ESR spectra of Pb centers were recorded at the interface between randomly oriented silicon nanocrystallites and SiO2. More... »

PAGES

821-826

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1385719

DOI

http://dx.doi.org/10.1134/1.1385719

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1018584973


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bratus\u2019", 
        "givenName": "V. Ya.", 
        "id": "sg:person.013466053261.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013466053261.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yukhimchuk", 
        "givenName": "V. A.", 
        "id": "sg:person.012141225461.43", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012141225461.43"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Berezhinsky", 
        "givenName": "L. I.", 
        "id": "sg:person.07613447473.70", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07613447473.70"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Valakh", 
        "givenName": "M. Ya.", 
        "id": "sg:person.014000275475.88", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014000275475.88"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vorona", 
        "givenName": "I. P.", 
        "id": "sg:person.01105463711.95", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01105463711.95"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Indutnyi", 
        "givenName": "I. Z.", 
        "id": "sg:person.014721671472.22", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014721671472.22"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Petrenko", 
        "givenName": "T. T.", 
        "id": "sg:person.01037175076.06", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01037175076.06"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shepeliavyi", 
        "givenName": "P. E.", 
        "id": "sg:person.011141052452.70", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011141052452.70"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yanchuk", 
        "givenName": "I. B.", 
        "id": "sg:person.0656573036.54", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0656573036.54"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2001-07", 
    "datePublishedReg": "2001-07-01", 
    "description": "The results of a comprehensive study by the methods of IR absorption, Raman scattering, photoluminescence (PL), and electron spin resonance (ESR) of SiOx films prepared by thermal evaporation of SiO in a vacuum are presented. The nature of structural transformations occurring on annealing the films is determined. Annealing in the temperature range 300\u2013600\u00b0C gives rise to a PL band at 650 nm, presumably related to structural defects in SiOx film. Raising the annealing temperature further leads to healing of such defects and quenching of the PL band. Silicon precipitates pass from the amorphous to the crystalline state on being annealed at Tann=1100\u00b0C, which gives rise to a new PL band at 730 nm. ESR spectra of Pb centers were recorded at the interface between randomly oriented silicon nanocrystallites and SiO2.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/1.1385719", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "7", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "35"
      }
    ], 
    "keywords": [
      "SiOx films", 
      "silicon precipitates", 
      "thermal evaporation", 
      "annealing temperature", 
      "temperature range 300", 
      "nanocrystallite formation", 
      "films", 
      "silicon nanocrystallites", 
      "structural transformation", 
      "PL band", 
      "Pb centers", 
      "structural defects", 
      "range 300", 
      "such defects", 
      "electron spin resonance", 
      "photoluminescence", 
      "Raman scattering", 
      "new PL band", 
      "comprehensive study", 
      "SiO", 
      "nanocrystallites", 
      "SiO2", 
      "evaporation", 
      "precipitates", 
      "IR absorption", 
      "interface", 
      "temperature", 
      "vacuum", 
      "band", 
      "crystalline state", 
      "defects", 
      "spin resonance", 
      "absorption", 
      "transformation", 
      "method", 
      "quenching", 
      "results", 
      "formation", 
      "resonance", 
      "rise", 
      "spectra", 
      "scattering", 
      "state", 
      "nature", 
      "study", 
      "healing", 
      "center", 
      "ESR spectra"
    ], 
    "name": "Structural transformations and silicon nanocrystallite formation in SiOx films", 
    "pagination": "821-826", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1018584973"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1385719"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1385719", 
      "https://app.dimensions.ai/details/publication/pub.1018584973"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-06-01T22:03", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220601/entities/gbq_results/article/article_320.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/1.1385719"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

166 TRIPLES      21 PREDICATES      75 URIs      66 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1385719 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N06733439fdb14490890a246ab3dd341b
5 schema:datePublished 2001-07
6 schema:datePublishedReg 2001-07-01
7 schema:description The results of a comprehensive study by the methods of IR absorption, Raman scattering, photoluminescence (PL), and electron spin resonance (ESR) of SiOx films prepared by thermal evaporation of SiO in a vacuum are presented. The nature of structural transformations occurring on annealing the films is determined. Annealing in the temperature range 300–600°C gives rise to a PL band at 650 nm, presumably related to structural defects in SiOx film. Raising the annealing temperature further leads to healing of such defects and quenching of the PL band. Silicon precipitates pass from the amorphous to the crystalline state on being annealed at Tann=1100°C, which gives rise to a new PL band at 730 nm. ESR spectra of Pb centers were recorded at the interface between randomly oriented silicon nanocrystallites and SiO2.
8 schema:genre article
9 schema:inLanguage en
10 schema:isAccessibleForFree false
11 schema:isPartOf N1efa52e0e9464d839fba03da17d3ae4c
12 Nd106f64c827342e4b5b1fdce0113838a
13 sg:journal.1136692
14 schema:keywords ESR spectra
15 IR absorption
16 PL band
17 Pb centers
18 Raman scattering
19 SiO
20 SiO2
21 SiOx films
22 absorption
23 annealing temperature
24 band
25 center
26 comprehensive study
27 crystalline state
28 defects
29 electron spin resonance
30 evaporation
31 films
32 formation
33 healing
34 interface
35 method
36 nanocrystallite formation
37 nanocrystallites
38 nature
39 new PL band
40 photoluminescence
41 precipitates
42 quenching
43 range 300
44 resonance
45 results
46 rise
47 scattering
48 silicon nanocrystallites
49 silicon precipitates
50 spectra
51 spin resonance
52 state
53 structural defects
54 structural transformation
55 study
56 such defects
57 temperature
58 temperature range 300
59 thermal evaporation
60 transformation
61 vacuum
62 schema:name Structural transformations and silicon nanocrystallite formation in SiOx films
63 schema:pagination 821-826
64 schema:productId N34f78bec9fca40d2b42fc00cfeb230e3
65 N5f4caf0dd0284607afe218c227c7f9af
66 schema:sameAs https://app.dimensions.ai/details/publication/pub.1018584973
67 https://doi.org/10.1134/1.1385719
68 schema:sdDatePublished 2022-06-01T22:03
69 schema:sdLicense https://scigraph.springernature.com/explorer/license/
70 schema:sdPublisher N5994c3cd767c42fdbfb776a758e5a7bd
71 schema:url https://doi.org/10.1134/1.1385719
72 sgo:license sg:explorer/license/
73 sgo:sdDataset articles
74 rdf:type schema:ScholarlyArticle
75 N06733439fdb14490890a246ab3dd341b rdf:first sg:person.013466053261.29
76 rdf:rest Nb13b2b3205604bf7a013574025cc04e8
77 N1efa52e0e9464d839fba03da17d3ae4c schema:volumeNumber 35
78 rdf:type schema:PublicationVolume
79 N2a06f473a07446d1aa2d8f859132320b rdf:first sg:person.014721671472.22
80 rdf:rest Ne01110c711d245868a5ba8f53f0a1c30
81 N34f78bec9fca40d2b42fc00cfeb230e3 schema:name doi
82 schema:value 10.1134/1.1385719
83 rdf:type schema:PropertyValue
84 N5994c3cd767c42fdbfb776a758e5a7bd schema:name Springer Nature - SN SciGraph project
85 rdf:type schema:Organization
86 N5f4caf0dd0284607afe218c227c7f9af schema:name dimensions_id
87 schema:value pub.1018584973
88 rdf:type schema:PropertyValue
89 N81453ad0a5f8406d9aa305f3c46bde70 rdf:first sg:person.01105463711.95
90 rdf:rest N2a06f473a07446d1aa2d8f859132320b
91 Nb13b2b3205604bf7a013574025cc04e8 rdf:first sg:person.012141225461.43
92 rdf:rest Ne6e15a90bfff438e9afc08a236a0f534
93 Nc92ffb9551c54f3cbf1031e52c2e3e99 rdf:first sg:person.014000275475.88
94 rdf:rest N81453ad0a5f8406d9aa305f3c46bde70
95 Nd106f64c827342e4b5b1fdce0113838a schema:issueNumber 7
96 rdf:type schema:PublicationIssue
97 Ne01110c711d245868a5ba8f53f0a1c30 rdf:first sg:person.01037175076.06
98 rdf:rest Ne6bdce8670834bf3afd154982e6b2e2f
99 Ne6bdce8670834bf3afd154982e6b2e2f rdf:first sg:person.011141052452.70
100 rdf:rest Nf4acbd807d974789b91947e9de0f9975
101 Ne6e15a90bfff438e9afc08a236a0f534 rdf:first sg:person.07613447473.70
102 rdf:rest Nc92ffb9551c54f3cbf1031e52c2e3e99
103 Nf4acbd807d974789b91947e9de0f9975 rdf:first sg:person.0656573036.54
104 rdf:rest rdf:nil
105 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
106 schema:name Physical Sciences
107 rdf:type schema:DefinedTerm
108 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
109 schema:name Condensed Matter Physics
110 rdf:type schema:DefinedTerm
111 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
112 schema:name Quantum Physics
113 rdf:type schema:DefinedTerm
114 sg:journal.1136692 schema:issn 1063-7826
115 1090-6479
116 schema:name Semiconductors
117 schema:publisher Pleiades Publishing
118 rdf:type schema:Periodical
119 sg:person.01037175076.06 schema:affiliation grid-institutes:grid.466789.2
120 schema:familyName Petrenko
121 schema:givenName T. T.
122 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01037175076.06
123 rdf:type schema:Person
124 sg:person.01105463711.95 schema:affiliation grid-institutes:grid.466789.2
125 schema:familyName Vorona
126 schema:givenName I. P.
127 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01105463711.95
128 rdf:type schema:Person
129 sg:person.011141052452.70 schema:affiliation grid-institutes:grid.466789.2
130 schema:familyName Shepeliavyi
131 schema:givenName P. E.
132 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011141052452.70
133 rdf:type schema:Person
134 sg:person.012141225461.43 schema:affiliation grid-institutes:grid.466789.2
135 schema:familyName Yukhimchuk
136 schema:givenName V. A.
137 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012141225461.43
138 rdf:type schema:Person
139 sg:person.013466053261.29 schema:affiliation grid-institutes:grid.466789.2
140 schema:familyName Bratus’
141 schema:givenName V. Ya.
142 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013466053261.29
143 rdf:type schema:Person
144 sg:person.014000275475.88 schema:affiliation grid-institutes:grid.466789.2
145 schema:familyName Valakh
146 schema:givenName M. Ya.
147 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014000275475.88
148 rdf:type schema:Person
149 sg:person.014721671472.22 schema:affiliation grid-institutes:grid.466789.2
150 schema:familyName Indutnyi
151 schema:givenName I. Z.
152 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014721671472.22
153 rdf:type schema:Person
154 sg:person.0656573036.54 schema:affiliation grid-institutes:grid.466789.2
155 schema:familyName Yanchuk
156 schema:givenName I. B.
157 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0656573036.54
158 rdf:type schema:Person
159 sg:person.07613447473.70 schema:affiliation grid-institutes:grid.466789.2
160 schema:familyName Berezhinsky
161 schema:givenName L. I.
162 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07613447473.70
163 rdf:type schema:Person
164 grid-institutes:grid.466789.2 schema:alternateName Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine
165 schema:name Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kiev, Ukraine
166 rdf:type schema:Organization
 




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