Direct bonding of silicon wafers with the concurrent formation of diffusion layers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2001-06

AUTHORS

I. V. Grekhov, L. S. Kostina, T. S. Argunova, E. I. Belyakova, N. M. Shmidt, K. B. Kostin, E. D. Kim, S. Ch. Kim

ABSTRACT

An original technique for Si-Si direct bonding combined with impurity diffusion in a single process is suggested. A dopant (aluminum) source is located at the interface. The high-temperature treatment of the polished wafers in an oxidizing atmosphere results in the diffusion of Al atoms and the formation of a p-n junction in n-silicon. The presence of aluminum is shown to improve the continuity of the interface. Results obtained are explained within a model whereby the initial contact between the hydrophilic silicon surfaces in a water solution of aluminum nitrate Al(NO3)3 serves to increase the bonding area of the wafers at room temperature due to the interaction of Al-OH groups with water molecules adsorbed on the surfaces of the wafers. More... »

PAGES

690-695

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1379636

DOI

http://dx.doi.org/10.1134/1.1379636

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1036749630


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