Silicon network in a-Si:H films containing ordered inclusions View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2001-05

AUTHORS

O. A. Golikova, E. V. Bogdanova, M. M. Kazanin, A. N. Kuznetsov, V. A. Terekhov, V. M. Kashkarov, O. V. Ostapenko

ABSTRACT

a-Si:H films with inclusions of (SiH2)n clusters or Si nanocrystals have been grown by magnetron-assisted SiH4 decomposition (dc-MASD). The films were characterized by the microstructural parameter R=0.7–1.0. Ultrasoft X-ray emission spectroscopy was applied to establish the effect of these inclusions on the increasing ordering of Si network. It is shown that, irrespective of the nature of the inclusions, their effect is strongest for films of intrinsic material deposited at high temperatures (up to 400°C). More... »

PAGES

579-582

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1371625

DOI

http://dx.doi.org/10.1134/1.1371625

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1007076194


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