Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2001-05

AUTHORS

V. A. Odnoblyudov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, E. S. Semenova, V. M. Ustinov

ABSTRACT

A thermodynamic model describing the growth of GaAsN ternary solid solutions is presented. The model is able to predict the nitrogen content of GaAsN layers in relation to external parameters (flow rate of molecular nitrogen, arsenic flux, growth rate, and substrate temperature). The proposed model accounts for experimental observations such as the leveling-off dependence of the composition on the rate of the external flow of nitrogen, the existence of a plateau in the temperature dependence of the composition, and luminescence peak broadening with respect to the ideal case. More... »

PAGES

533-538

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1371617

DOI

http://dx.doi.org/10.1134/1.1371617

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1029605559


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