Mechanism of the current flow in Pd-(heavily doped p-AlxGa1−xN) ohmic contact View Full Text


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Article Info

DATE

2001-05

AUTHORS

T. V. Blank, Yu. A. Goldberg, E. V. Kalinina, O. V. Konstantinov, A. E. Nikolaev, A. V. Fomin, A. E. Cherenkov

ABSTRACT

The physical mechanism of the current flow in Pd-(heavily doped p-AlxGa1−xN) ohmic contact is studied. Chloride-hydride epitaxy was used to grow the p-Al0.06Ga0.94N solid solution with uncompensated acceptor concentration Na–Nd ranging from 3×1018 up to 1019 cm−3. Thermal vacuum deposition and subsequent thermal treatment were used to form an ohmic Pd contact. It is shown that, after the thermal treatment, the Pd-p-Al0.06Ga0.94N barrier contact with a potential barrier height of about 2.3 V becomes ohmic and the barrier height decreases to approximately 0.05 V. For uncompensated acceptor concentration Na–Nd=3×1018 cm−3, thermionic emission is found to be the main mechanism of the current through the Pd-p-Al0.06Ga0.94N ohmic contact. An increase in Na–Nd to approximately 1019 cm−3 in the solid solution leads to a transition from thermionic emission (at high temperatures) to tunneling (at low temperatures). More... »

PAGES

529-532

References to SciGraph publications

  • 1995. Schottky Barriers on p-GaN in MRS ADVANCES
  • Identifiers

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    http://scigraph.springernature.com/pub.10.1134/1.1371616

    DOI

    http://dx.doi.org/10.1134/1.1371616

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