Effect of oxygen on the chemical reactions and electron work function in Ba-Si and BaO-Si structures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2001-04

AUTHORS

V. V. Il’chenko, G. V. Kuznetsov

ABSTRACT

Effects of the annealing in oxygen on the chemical composition and electron work function of Ba-Si and BaO-Si structures were studied. Thin Ba or BaO layers deposited onto silicon stimulate oxidation processes on the semiconductor surface. Treatment of the Ba-Si and BaO-Si samples at temperatures Ts≥500°C leads to the formation of a barium orthosilicate (Ba2SiO4) layer. A decrease in the electron work function observed for the silicon surface coated with both barium oxide and barium silicate layers provides for a more than tenfold increase in the electron emission current. More... »

PAGES

333-335

Journal

TITLE

Technical Physics Letters

ISSUE

4

VOLUME

27

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1370218

DOI

http://dx.doi.org/10.1134/1.1370218

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1007193633


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