A study of deep traps at the SiO2/6H-SiC interface relying upon the nonequilibrium field effect View Full Text


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Article Info

DATE

2001-04

AUTHORS

P. A. Ivanov, T. P. Samsonova, V. N. Panteleev, D. Yu. Polyakov

ABSTRACT

The nonequilibrium field effect associated with deep surface states at the SiO2/6H-SiC interface has been observed and studied in a 6H-SiC MOSFET of depletion-accumulation type. An analysis of the relaxation of channel conductance at elevated temperatures upon filling of the surface traps with nonequilibrium carriers has shown that the energy distribution of the surface traps has the form of a narrow Gaussian peak in the upper half of the 6H-SiC band gap, with a peak energy EC−Etm = 1.19eV, peak width ΔEt≈85 meV, and electron capture cross section σn≈10−14 cm2. These surface states are believed to have the fundamental nature of “oxidation defects” similar to Pb centers in the SiO2-Si system (of dangling silicon bonds). More... »

PAGES

468-473

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1365197

DOI

http://dx.doi.org/10.1134/1.1365197

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1005157510


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ivanov", 
        "givenName": "P. A.", 
        "id": "sg:person.010230425734.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010230425734.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Samsonova", 
        "givenName": "T. P.", 
        "id": "sg:person.010276541134.45", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010276541134.45"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Panteleev", 
        "givenName": "V. N.", 
        "id": "sg:person.015041541011.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015041541011.53"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Polyakov", 
        "givenName": "D. Yu.", 
        "type": "Person"
      }
    ], 
    "datePublished": "2001-04", 
    "datePublishedReg": "2001-04-01", 
    "description": "The nonequilibrium field effect associated with deep surface states at the SiO2/6H-SiC interface has been observed and studied in a 6H-SiC MOSFET of depletion-accumulation type. An analysis of the relaxation of channel conductance at elevated temperatures upon filling of the surface traps with nonequilibrium carriers has shown that the energy distribution of the surface traps has the form of a narrow Gaussian peak in the upper half of the 6H-SiC band gap, with a peak energy EC\u2212Etm = 1.19eV, peak width \u0394Et\u224885 meV, and electron capture cross section \u03c3n\u224810\u221214 cm2. These surface states are believed to have the fundamental nature of \u201coxidation defects\u201d similar to Pb centers in the SiO2-Si system (of dangling silicon bonds).", 
    "genre": "article", 
    "id": "sg:pub.10.1134/1.1365197", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "4", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "35"
      }
    ], 
    "keywords": [
      "field effects", 
      "surface states", 
      "surface traps", 
      "electron capture cross sections", 
      "deep surface states", 
      "capture cross section", 
      "SiO2-Si system", 
      "elevated temperatures", 
      "nonequilibrium carriers", 
      "energy distribution", 
      "band gap", 
      "peak energy", 
      "Pb centers", 
      "narrow Gaussian peaks", 
      "cross sections", 
      "deep traps", 
      "Gaussian peaks", 
      "peak width", 
      "interface", 
      "fundamental nature", 
      "MOSFETs", 
      "traps", 
      "MeV", 
      "cm2", 
      "temperature", 
      "state", 
      "channel conductance", 
      "upper half", 
      "energy", 
      "width", 
      "relaxation", 
      "carriers", 
      "effect", 
      "distribution", 
      "peak", 
      "gap", 
      "oxidation defects", 
      "system", 
      "conductance", 
      "nature", 
      "defects", 
      "form", 
      "sections", 
      "analysis", 
      "types", 
      "center", 
      "study", 
      "half"
    ], 
    "name": "A study of deep traps at the SiO2/6H-SiC interface relying upon the nonequilibrium field effect", 
    "pagination": "468-473", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1005157510"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1365197"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1365197", 
      "https://app.dimensions.ai/details/publication/pub.1005157510"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-08-04T16:52", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220804/entities/gbq_results/article/article_316.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/1.1365197"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

129 TRIPLES      20 PREDICATES      74 URIs      65 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1365197 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author Nfca19d46550040889def73385e423f96
5 schema:datePublished 2001-04
6 schema:datePublishedReg 2001-04-01
7 schema:description The nonequilibrium field effect associated with deep surface states at the SiO2/6H-SiC interface has been observed and studied in a 6H-SiC MOSFET of depletion-accumulation type. An analysis of the relaxation of channel conductance at elevated temperatures upon filling of the surface traps with nonequilibrium carriers has shown that the energy distribution of the surface traps has the form of a narrow Gaussian peak in the upper half of the 6H-SiC band gap, with a peak energy EC−Etm = 1.19eV, peak width ΔEt≈85 meV, and electron capture cross section σn≈10−14 cm2. These surface states are believed to have the fundamental nature of “oxidation defects” similar to Pb centers in the SiO2-Si system (of dangling silicon bonds).
8 schema:genre article
9 schema:isAccessibleForFree false
10 schema:isPartOf N0db9987a15644dae824bbf6589974317
11 Nb1512c88e794413e80816ddcd85c1fd2
12 sg:journal.1136692
13 schema:keywords Gaussian peaks
14 MOSFETs
15 MeV
16 Pb centers
17 SiO2-Si system
18 analysis
19 band gap
20 capture cross section
21 carriers
22 center
23 channel conductance
24 cm2
25 conductance
26 cross sections
27 deep surface states
28 deep traps
29 defects
30 distribution
31 effect
32 electron capture cross sections
33 elevated temperatures
34 energy
35 energy distribution
36 field effects
37 form
38 fundamental nature
39 gap
40 half
41 interface
42 narrow Gaussian peaks
43 nature
44 nonequilibrium carriers
45 oxidation defects
46 peak
47 peak energy
48 peak width
49 relaxation
50 sections
51 state
52 study
53 surface states
54 surface traps
55 system
56 temperature
57 traps
58 types
59 upper half
60 width
61 schema:name A study of deep traps at the SiO2/6H-SiC interface relying upon the nonequilibrium field effect
62 schema:pagination 468-473
63 schema:productId N357b3a0c79a24b42afcfc61ef217c44e
64 N4607f7f323e546ccb660a3229b3ab57e
65 schema:sameAs https://app.dimensions.ai/details/publication/pub.1005157510
66 https://doi.org/10.1134/1.1365197
67 schema:sdDatePublished 2022-08-04T16:52
68 schema:sdLicense https://scigraph.springernature.com/explorer/license/
69 schema:sdPublisher N8332bece7f5d4b3f87254b5a511c13f1
70 schema:url https://doi.org/10.1134/1.1365197
71 sgo:license sg:explorer/license/
72 sgo:sdDataset articles
73 rdf:type schema:ScholarlyArticle
74 N0db9987a15644dae824bbf6589974317 schema:volumeNumber 35
75 rdf:type schema:PublicationVolume
76 N357b3a0c79a24b42afcfc61ef217c44e schema:name doi
77 schema:value 10.1134/1.1365197
78 rdf:type schema:PropertyValue
79 N3e457f25d0a2453297ed32e20916277b rdf:first Ne78f801befd6484cb7457b22cee5d442
80 rdf:rest rdf:nil
81 N4607f7f323e546ccb660a3229b3ab57e schema:name dimensions_id
82 schema:value pub.1005157510
83 rdf:type schema:PropertyValue
84 N525e66ec0d7c42b7b0b0fa826322db67 rdf:first sg:person.015041541011.53
85 rdf:rest N3e457f25d0a2453297ed32e20916277b
86 N8332bece7f5d4b3f87254b5a511c13f1 schema:name Springer Nature - SN SciGraph project
87 rdf:type schema:Organization
88 Nb1512c88e794413e80816ddcd85c1fd2 schema:issueNumber 4
89 rdf:type schema:PublicationIssue
90 Nb716d646fb97400d9a32b46a21e6183b rdf:first sg:person.010276541134.45
91 rdf:rest N525e66ec0d7c42b7b0b0fa826322db67
92 Ne78f801befd6484cb7457b22cee5d442 schema:affiliation grid-institutes:grid.423485.c
93 schema:familyName Polyakov
94 schema:givenName D. Yu.
95 rdf:type schema:Person
96 Nfca19d46550040889def73385e423f96 rdf:first sg:person.010230425734.18
97 rdf:rest Nb716d646fb97400d9a32b46a21e6183b
98 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
99 schema:name Physical Sciences
100 rdf:type schema:DefinedTerm
101 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
102 schema:name Condensed Matter Physics
103 rdf:type schema:DefinedTerm
104 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
105 schema:name Quantum Physics
106 rdf:type schema:DefinedTerm
107 sg:journal.1136692 schema:issn 1063-7826
108 1090-6479
109 schema:name Semiconductors
110 schema:publisher Pleiades Publishing
111 rdf:type schema:Periodical
112 sg:person.010230425734.18 schema:affiliation grid-institutes:grid.423485.c
113 schema:familyName Ivanov
114 schema:givenName P. A.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010230425734.18
116 rdf:type schema:Person
117 sg:person.010276541134.45 schema:affiliation grid-institutes:grid.423485.c
118 schema:familyName Samsonova
119 schema:givenName T. P.
120 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010276541134.45
121 rdf:type schema:Person
122 sg:person.015041541011.53 schema:affiliation grid-institutes:grid.423485.c
123 schema:familyName Panteleev
124 schema:givenName V. N.
125 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015041541011.53
126 rdf:type schema:Person
127 grid-institutes:grid.423485.c schema:alternateName Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
128 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
129 rdf:type schema:Organization
 




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