High-quality ZnO/GaN/α-Al2O3 heteroepitaxial structures grown by CVD View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2001-01

AUTHORS

B. M. Ataev, I. K. Kamilov, W. V. Lundin, V. V. Mamedov, A. K. Omaev, Sh. -M. O. Shakhshaev

ABSTRACT

The first results on the preparation of (0001)ZnO/(0001)GaN/(0001) α-Al2O3 heteroepitaxial structures by CVD in a low-pressure flow-type reactor are reported. Study of the surface morphology and X-ray diffraction patterns showed high structural perfection of the zinc oxide layer, with a block misorientation in the basal plane not exceeding 21′. The photoluminescence spectra of samples exhibited dominating emission in the exciton region. More... »

PAGES

55-57

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1345165

DOI

http://dx.doi.org/10.1134/1.1345165

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1046457862


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