Effect of sulfur and selenium on the surface relief of insulating films and electrical characteristics of metal-insulator-p-GaAs structures View Full Text


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Article Info

DATE

2001-01

AUTHORS

A. V. Panin, A. R. Shugurov, V. M. Kalygina

ABSTRACT

The effect of S and Se atoms on the surface relief of insulating layers deposited on the GaAs substrate was investigated. It was demonstrated that the incorporation of chalcogens in the surface region of a semiconductor leads to smoothing of the surface relief of insulating films. Simultaneous decrease in the density of surface states at the insulator-p-GaAs interface was observed. The resulting effect of the S and Se atoms depends on the insulating material. More... »

PAGES

80-85

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1340294

DOI

http://dx.doi.org/10.1134/1.1340294

DIMENSIONS

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