Photoluminescence of porous silicon layers formed in ion-implanted silicon wafers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2000-11

AUTHORS

Yu. P. Piryatinskii, N. I. Klyui, A. G. Rozhin

ABSTRACT

Implantation of the B+ and N+ ions or a B+ + N+ combination into silicon substrates affects the photoluminescence properties of porous silicon (por-Si) layers prepared on the ion-modified wafers. The postimplantation anneals lead to significant changes in the por-Si emission bands. Models explaining the observed phenomena are suggested.

PAGES

944-946

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1329678

DOI

http://dx.doi.org/10.1134/1.1329678

DIMENSIONS

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